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Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps
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10.1063/1.2212069
/content/aip/journal/jap/100/1/10.1063/1.2212069
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2212069
/content/aip/journal/jap/100/1/10.1063/1.2212069
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/content/aip/journal/jap/100/1/10.1063/1.2212069
2006-07-12
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2212069
10.1063/1.2212069
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