Atomic force microscope images of the MOCVD (a) and ammonia MBE grown GaN template (b).
Variation of indium content in the quantum wells as determined by high-resolution x-ray diffraction with the substrate temperature. The arrows indicate the two QWs that have been studied by TRPL and CL mapping.
(Color online) CL wavelength images and integral CL spectrum of the QWs deposited on atomically smooth [(a) and (b)] and on faceted surface GaN template [(c) and (d)].
PL spectra of QWs deposited on atomically smooth (a) and faceted surface GaN template (b) at different temperatures. In (a), the observed Fabry-Pérot fringes indicate that the surface is maintained smooth after the deposition of the QWs. The insert shows the variation of the PL peak energy as a function of temperature.
Variations with temperature of the normalized, integrated PL intensity for the QWs deposited on smooth (a) and faceted surface GaN template (b).
Temperature dependence of the characteristic decay time for the QWs deposited on smooth (a) and on faceted surface GaN template.
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