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Strong potential profile fluctuations and effective localization process in multiple quantum wells grown on faceted surface GaN template
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10.1063/1.2214211
/content/aip/journal/jap/100/1/10.1063/1.2214211
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2214211
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Atomic force microscope images of the MOCVD (a) and ammonia MBE grown GaN template (b).

Image of FIG. 2.
FIG. 2.

Variation of indium content in the quantum wells as determined by high-resolution x-ray diffraction with the substrate temperature. The arrows indicate the two QWs that have been studied by TRPL and CL mapping.

Image of FIG. 3.
FIG. 3.

(Color online) CL wavelength images and integral CL spectrum of the QWs deposited on atomically smooth [(a) and (b)] and on faceted surface GaN template [(c) and (d)].

Image of FIG. 4.
FIG. 4.

PL spectra of QWs deposited on atomically smooth (a) and faceted surface GaN template (b) at different temperatures. In (a), the observed Fabry-Pérot fringes indicate that the surface is maintained smooth after the deposition of the QWs. The insert shows the variation of the PL peak energy as a function of temperature.

Image of FIG. 5.
FIG. 5.

Variations with temperature of the normalized, integrated PL intensity for the QWs deposited on smooth (a) and faceted surface GaN template (b).

Image of FIG. 6.
FIG. 6.

Temperature dependence of the characteristic decay time for the QWs deposited on smooth (a) and on faceted surface GaN template.

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/content/aip/journal/jap/100/1/10.1063/1.2214211
2006-07-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2214211
10.1063/1.2214211
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