HRXRD data for (a) SL with a period of obtained by exposure of GaAs to at for ; (b) SL with a period of approximately formed by exposure of GaSb to at for .
Cross sectional bright field images and high-resolution TEM of interfaces taken along the  zone axis for SL grown by exposing (a) GaAs to at for ; (b) GaSb to flux at for ; (c) GaSb to at for . The lines represent growth-interrupted interfaces; the dark spots are “clusters” (Ref. 39).
AFM three-dimensional (3D) topographical images (a) for GaAs layers exposed to for at 420 and , and (b) for GaSb layers exposed to for at various temperatures. The surface roughness, root mean square roughness (rms), is also indicated. Lateral scale is for every image, but for last image.
Comparison of , , and high-resolution photoelectron peaks for GaSb and GaAs substrates, for a GaSb surface exposed to for at , and for a GaAs surface exposed to for at .
photoelectron peaks acquired for GaSb layers exposed to and for different times and at different temperatures.
XPS quantitative ratios, as measured from the peak areas, for as-grown GaAs and GaSb epitaxial layers and after exposure of the latter to and for at .
Ratio of the areas of the GaAs-to- fit components in the photoelectron peak for GaSb layers exposed to and for 10 and at various temperatures.
Typical spectra of the real and imaginary parts of a GaSb substrate (dashed line) and the SE spectra recorded for two SLs obtained by exposure of the GaSb epitaxial layers to an flux for (thick line) and (thin line) at the temperatures of 440 and . The best-fit model is also shown.
Arrhenius-like plot of the Ga–As bond formation rate (calculated by the layer thickness determined by ellipsometry) for SLs obtained by and soak time of GaSb layers.
Article metrics loading...
Full text loading...