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Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions
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10.1063/1.2216049
/content/aip/journal/jap/100/1/10.1063/1.2216049
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2216049
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Figures

Image of FIG. 1.
FIG. 1.

HRXRD data for (a) SL with a period of obtained by exposure of GaAs to at for ; (b) SL with a period of approximately formed by exposure of GaSb to at for .

Image of FIG. 2.
FIG. 2.

Cross sectional bright field images and high-resolution TEM of interfaces taken along the [110] zone axis for SL grown by exposing (a) GaAs to at for ; (b) GaSb to flux at for ; (c) GaSb to at for . The lines represent growth-interrupted interfaces; the dark spots are “clusters” (Ref. 39).

Image of FIG. 3.
FIG. 3.

AFM three-dimensional (3D) topographical images (a) for GaAs layers exposed to for at 420 and , and (b) for GaSb layers exposed to for at various temperatures. The surface roughness, root mean square roughness (rms), is also indicated. Lateral scale is for every image, but for last image.

Image of FIG. 4.
FIG. 4.

Comparison of , , and high-resolution photoelectron peaks for GaSb and GaAs substrates, for a GaSb surface exposed to for at , and for a GaAs surface exposed to for at .

Image of FIG. 5.
FIG. 5.

photoelectron peaks acquired for GaSb layers exposed to and for different times and at different temperatures.

Image of FIG. 6.
FIG. 6.

XPS quantitative ratios, as measured from the peak areas, for as-grown GaAs and GaSb epitaxial layers and after exposure of the latter to and for at .

Image of FIG. 7.
FIG. 7.

Ratio of the areas of the GaAs-to- fit components in the photoelectron peak for GaSb layers exposed to and for 10 and at various temperatures.

Image of FIG. 8.
FIG. 8.

Typical spectra of the real and imaginary parts of a GaSb substrate (dashed line) and the SE spectra recorded for two SLs obtained by exposure of the GaSb epitaxial layers to an flux for (thick line) and (thin line) at the temperatures of 440 and . The best-fit model is also shown.

Image of FIG. 9.
FIG. 9.

Arrhenius-like plot of the Ga–As bond formation rate (calculated by the layer thickness determined by ellipsometry) for SLs obtained by and soak time of GaSb layers.

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/content/aip/journal/jap/100/1/10.1063/1.2216049
2006-07-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2216049
10.1063/1.2216049
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