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Photoreflectance determination of the wetting layer thickness in the quantum dot system for a broad indium content range of 0.3–1
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10.1063/1.2364604
/content/aip/journal/jap/100/10/10.1063/1.2364604
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/10/10.1063/1.2364604
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PR spectrum for an QD structure revealing the WL QW transitions at typically observed energies.

Image of FIG. 2.
FIG. 2.

Wetting layer quantum well transition energies (for both heavy and light holes) in self-assembled QD structures vs the energy of the QD ground state transitions. The dotted line represents the mean value.

Image of FIG. 3.
FIG. 3.

Calculated heavy hole and light hole related transition energies (solid lines) in a 1.6 ML thin rectangular QW as a function of the conduction band offset ratio. The dotted lines mark the mean energy values from Fig. 2; the dashed line shows the best agreement value.

Image of FIG. 4.
FIG. 4.

WL QW transition energies calculated as a function of the In atoms diffusion length. Full squares mark the experimental energy. The insets show the In content profile for three diffusion lengths (0, 0.3, and 0.35) and the respective shapes of the conduction band well.

Image of FIG. 5.
FIG. 5.

Liquid nitrogen temperature PR spectra for various In contents of QD structures for low content (low-strain) structures; (b) for various In contents in the vicinity of the WL transitions.

Image of FIG. 6.
FIG. 6.

Energy level calculations for an QW vs well width and for a few band offset ratios (treated as a semifree parameter).

Image of FIG. 7.
FIG. 7.

Liquid nitrogen temperature PR spectra for various In contents of QD structures for various In contents in the vicinity of the WL transitions.

Image of FIG. 8.
FIG. 8.

Experimentally derived WL thickness values as a function of the nominal indium content in self-assembled QD structures.

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/content/aip/journal/jap/100/10/10.1063/1.2364604
2006-11-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoreflectance determination of the wetting layer thickness in the InxGa1−xAs∕GaAs quantum dot system for a broad indium content range of 0.3–1
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/10/10.1063/1.2364604
10.1063/1.2364604
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