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High power ultraviolet light emitting diodes based on quantum wells produced by molecular beam epitaxy
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10.1063/1.2388127
/content/aip/journal/jap/100/10/10.1063/1.2388127
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/10/10.1063/1.2388127
/content/aip/journal/jap/100/10/10.1063/1.2388127
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/content/aip/journal/jap/100/10/10.1063/1.2388127
2006-11-27
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High power ultraviolet light emitting diodes based on GaN∕AlGaN quantum wells produced by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/10/10.1063/1.2388127
10.1063/1.2388127
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