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Retention loss behaviors in heteroepitaxial ferroelectric film with a monodomain fabricated by hydrothermal epitaxy below
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10.1063/1.2369664
/content/aip/journal/jap/100/11/10.1063/1.2369664
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2369664

Figures

Image of FIG. 1.
FIG. 1.

The distance of the lateral movement of the domain wall plotted as a function of time for the dot domains and the square domains in thin film (Ref. 18).

Image of FIG. 2.
FIG. 2.

The calculated graphs of the free energy vs the downward spontaneous polarization using Eq. (3).

Image of FIG. 3.
FIG. 3.

The distance of the lateral movement of the domain wall plotted as a function of time for the square domain in thin film at 25 and .

Image of FIG. 4.
FIG. 4.

PFM images of the domain reversed using a Ni top electrode. (a) was taken immediately after the removal of the Ni top electrode and (b) was taken after . PFM images of the square domain on the island (c) immediately after the domain switching and (d) after .

Image of FIG. 5.
FIG. 5.

Schematic diagrams of the dot domains switched by pulse voltages with various pulse times . The arrows mean polarization vectors.

Image of FIG. 6.
FIG. 6.

PFM images show the retention loss phenomena of the dot domains switched by applying electric pulse with various widths of , , , and . (a) Immediately after, (b) after , (c) after , and (d) after .

Tables

Generic image for table
Table I.

Hydrothermal synthesis conditions for heteroepitaxial thin films.

Generic image for table
Table II.

Values of constants used in the calculations.

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/content/aip/journal/jap/100/11/10.1063/1.2369664
2006-12-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2369664
10.1063/1.2369664
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