1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering
Rent:
Rent this article for
USD
10.1063/1.2372571
/content/aip/journal/jap/100/11/10.1063/1.2372571
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2372571
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the plasma sputtering apparatus.

Image of FIG. 2.
FIG. 2.

Temperature rise of the substrate during sputter deposition, monitored using a -type thermocouple.

Image of FIG. 3.
FIG. 3.

Electrical properties of ITO films on glass substrates, shown as a function of the hydrogen partial pressure. The solid lines in the figures indicate the tendencies of the data.

Image of FIG. 4.
FIG. 4.

SEM images of surface morphologies of ITO films prepared under conditions of various hydrogen partial pressures: (a) , (b) , and (c) .

Image of FIG. 5.
FIG. 5.

Photographs of ITO films prepared on glass substrates under conditions of various hydrogen partial pressures: (a) , (b) , and (c) .

Image of FIG. 6.
FIG. 6.

Electrical properties of ITO films prepared on glass substrates under the following two conditions of a working plasma gas. One plasma has a hydrogen partial pressure of [0.8% of the pressure of the working plasma gas, referred to as “with (0.8%)”], and the other is a plasma without hydrogen (only Ar gas plasma, referred to as “without ”).

Image of FIG. 7.
FIG. 7.

Change in electrical properties of ITO films on glass substrates before and after postannealing of the ITO films for at in an oxygen atmosphere. The films are prepared using a plasma without hydrogen.

Image of FIG. 8.
FIG. 8.

Change in electrical properties of ITO films on glass substrates before and after postannealing of the ITO films for at in an oxygen atmosphere. The films are prepared using a plasma with hydrogen.

Image of FIG. 9.
FIG. 9.

Number of carriers as a function the ITO film thickness, calculated using Eq. (2) and the results of Fig. 6(c).

Image of FIG. 10.
FIG. 10.

The change in the number of carriers as a function of the ITO film thickness after postannealing.

Image of FIG. 11.
FIG. 11.

XRD profiles of the ITO films prepared using plasmas with and without hydrogen. The film thickness is .

Loading

Article metrics loading...

/content/aip/journal/jap/100/11/10.1063/1.2372571
2006-12-01
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2372571
10.1063/1.2372571
SEARCH_EXPAND_ITEM