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InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance
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10.1063/1.2390623
/content/aip/journal/jap/100/11/10.1063/1.2390623
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2390623
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-section schematics depicting the structure of the (a) PV , (b) and (c) AJ devices. All three devices have the same stoichiometric composition of and band gap of .

Image of FIG. 2.
FIG. 2.

(Color online) plot for PV device under irradiation by a source emitting particles, a source emitting particles, and simulated 1 sun, AM0 illumination. All measurements were performed at .

Image of FIG. 3.
FIG. 3.

(Color online) -particle energy deposition profile for an InGaP device from a source which emits particles. The width of the gray source is scaled in proportion to the width of the device ( radius).

Image of FIG. 4.
FIG. 4.

(Color online) -particle energy deposition profile for an InGaP device from a source which emits particles. The width of the gray source is scaled in proportion to the width of the device ( radius).

Image of FIG. 5.
FIG. 5.

(Color online) (a) Normalized open circuit voltage, (b) short circuit current density, (c) fill factor, and (d) maximum power, under AM0 illumination, as a function of -particle fluence up to . Weighted trend lines are shown for visual clarity.

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/content/aip/journal/jap/100/11/10.1063/1.2390623
2006-12-15
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2390623
10.1063/1.2390623
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