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Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy
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10.1063/1.2395680
/content/aip/journal/jap/100/11/10.1063/1.2395680
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2395680
/content/aip/journal/jap/100/11/10.1063/1.2395680
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/content/aip/journal/jap/100/11/10.1063/1.2395680
2006-12-11
2015-01-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/11/10.1063/1.2395680
10.1063/1.2395680
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