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Hole current impedance and electron current enhancement by back-contact barriers in CdTe thin film solar cells
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10.1063/1.2400799
/content/aip/journal/jap/100/12/10.1063/1.2400799
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/12/10.1063/1.2400799
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The dashed line on each panel represents the light baseline (BL) case. For the light and dark solid curves shown in (a)–(d), “high” or “low” lifetime represents an increase or decrease by a factor of 10. The low back barrier is , and the high back barrier is .

Image of FIG. 2.
FIG. 2.

Conduction and valence bands and quasi-Fermi levels corresponding to Fig. 1(c) low and high ): (a) light at zero bias, (b) dark in forward bias, and (c) light in forward bias.

Image of FIG. 3.
FIG. 3.

(a) Current flow in bulk CdTe layer and (b) the corresponding electron density in bulk CdTe layer.

Image of FIG. 4.
FIG. 4.

Conduction and valence bands and quasi-Fermi levels corresponding to Fig. 1(d) high and high ): (a) Dark and (b) light, both in forward bias.

Image of FIG. 5.
FIG. 5.

(a) Current flow in bulk CdTe layer and (b) the corresponding electron density in bulk CdTe layer.

Image of FIG. 6.
FIG. 6.

Division of back-contact-barrier/electron-lifetime plane into four regions. The points labeled (a)–(d) correspond to the parameters used in Figs. 1(a)–1(d).

Image of FIG. 7.
FIG. 7.

curves showing the transition between regions (c) and (d) in Fig. 6. throughout.

Image of FIG. 8.
FIG. 8.

(a) Conduction and valence bands for two absorber densities under illumination at zero bias and (b) the corresponding curves.

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/content/aip/journal/jap/100/12/10.1063/1.2400799
2006-12-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole current impedance and electron current enhancement by back-contact barriers in CdTe thin film solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/12/10.1063/1.2400799
10.1063/1.2400799
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