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Free-carrier absorption and active layer heating in large optical cavity high-power diode lasers
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10.1063/1.2212147
/content/aip/journal/jap/100/2/10.1063/1.2212147
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/2/10.1063/1.2212147
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic (not to scale) energy structure of the LOC laser studied in the paper (solid lines) and the carrier density profiles in the OCL (dashed lines). Optical sources of heat are also shown schematically.

Image of FIG. 2.
FIG. 2.

(Color online) Dependence of the active layer confinement factor (a), optical losses (b), and efficiency (c) on the OCL thickness in different InGaAsP laser structures at different current conditions. Dash-dotted: Symmetric waveguide. Dashed: Asymmetric waveguide with the active layer at the optical mode peak. Solid: Asymmetric waveguide with the active layer at the center of the OCL.

Image of FIG. 3.
FIG. 3.

Transverse distribution of the spatial profiles of the contributions to the heat flux and excess temperature (over the heat sink surface temperature) due to free-carrier absorption in the OCL of a symmetric laser structure with at a current density of (solid curves) and (dashed curves).

Image of FIG. 4.
FIG. 4.

OCL thickness dependence of the contributions to the heat flux at the heat sink, and to the excess temperature in the active layer (over the heat sink surface temperature) , due to free-carrier absorption in the OCL in a symmetric laser structure (dash-dotted lines) and an asymmetric one with the active layer at the centre (solid lines), at a current density of (a) and (b).

Image of FIG. 5.
FIG. 5.

OCL thickness dependence of the contributions to the heat flux at the heat sink, and to the excess temperature in the active layer , due to free-carrier absorption in the active layer in a symmetric laser structure (dash-dotted lines) and an asymmetric one with the active layer at the centre (solid lines), at a current density of .

Image of FIG. 6.
FIG. 6.

OCL thickness dependence of the contributions to the heat flux at the heat sink, and to the excess temperature in the active layer , due to free-carrier absorption in the -cladding in a symmetric laser structure (dash-dotted lines) and an asymmetric one with the active layer at the centre (solid lines), at a current density of .

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/content/aip/journal/jap/100/2/10.1063/1.2212147
2006-07-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Free-carrier absorption and active layer heating in large optical cavity high-power diode lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/2/10.1063/1.2212147
10.1063/1.2212147
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