Schematics of the three-layer quantum-well structure considered in the present work.
(Color online) The upper plot shows the strain component in the static case as a function of electric displacement for four different cases of material layers embedding AlN. The lower plot depicts the corresponding voltage across the heterostructure as a function of electric displacement . Line codings are as follows: (solid—equivalent to vacuum), (dashed), (dash-dotted), and (dotted). Figure values are in SI units.
(Color online) Resonance frequencies of a three-layer quantum-well system corresponding to one layer of GaN sandwiched between two layers of AlN. The figure shows the first three resonance frequencies (solid, dashed, and dashdotted curves, respectively) as a function of the GaN material-layer lengths. The two AlN layers have the same length equal to independent of the GaN material-layer length. Figure values are in SI units.
Contributions to the vertical strain in a given layer with GaN as buffer or substrate for the first three cases, and with AlN as the substrate for the last one. Parameters are taken from Jogai et al. (Ref. 5) and Christmas et al. (Ref. 3).
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