1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Transmission electron microscopy assessment of the Si enhancement of Ohmic contacts to undoped heterostructures
Rent:
Rent this article for
USD
10.1063/1.2218262
/content/aip/journal/jap/100/3/10.1063/1.2218262
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/3/10.1063/1.2218262
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Annealing temperature dependence of the contact resistance for the three metallization schemes.

Image of FIG. 2.
FIG. 2.

Bright field TEM picture of the microstructure of the contacts annealed at .

Image of FIG. 3.
FIG. 3.

Bright field TEM picture of the microstructure of contacts annealed at .

Image of FIG. 4.
FIG. 4.

Bright field TEM picture of the segregated Si-rich islands formed when annealing the metallization .

Image of FIG. 5.
FIG. 5.

Bright field TEM picture of the microstructure of the contacts annealed at .

Image of FIG. 6.
FIG. 6.

Bright field TEM picture of the microstructure of contacts annealed at .

Image of FIG. 7.
FIG. 7.

HRTEM picture of the contacts annealed at .

Loading

Article metrics loading...

/content/aip/journal/jap/100/3/10.1063/1.2218262
2006-08-02
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transmission electron microscopy assessment of the Si enhancement of Ti∕Al∕Ni∕Au Ohmic contacts to undoped AlGaN∕GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/3/10.1063/1.2218262
10.1063/1.2218262
SEARCH_EXPAND_ITEM