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Damage and recovery in boron doped silicon on insulator layers after high energy implantation
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10.1063/1.2220719
/content/aip/journal/jap/100/3/10.1063/1.2220719
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/3/10.1063/1.2220719
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Hole density and mobility vs isochronal annealing temperature of the most heavily B doped specimens. Three recovery stages are clearly evidenced.

Image of FIG. 2.
FIG. 2.

Mobility vs hole density after isochronal and isothermal annealings at different temperatures for both B concentrations. The open symbols refer to implanted samples, while the closed ones pertain to the reference undamaged specimens. reports the assessed data of the hole mobility (see Ref. 23). For each B concentration the mobility values only depend on the hole density and fall on the same curve irrespective of the heat treatment.

Image of FIG. 3.
FIG. 3.

Carrier density vs logarithm of the isothermal annealings time at 600 (a) and (b) for both B concentrations. The open symbols refer to implanted samples, while the closed ones pertain to the reference undamaged specimens.

Image of FIG. 4.
FIG. 4.

Carrier density vs logarithm of the isothermal annealing time at 700 (a) and (b) for both B concentrations. The open symbols refer to implanted samples, while the closed ones pertain to the reference undamaged specimens.

Image of FIG. 5.
FIG. 5.

TEM weak beam image of the most heavily doped composition annealed at [longest time in Fig. 4(b)]. The B precipitates are visible as tiny, bright spots, having an average size of about . The vertical bands are thickness fringes. Part of the oxide layer is included in the top part of the image.

Image of FIG. 6.
FIG. 6.

Carrier density vs isochronal heating temperature of samples previously annealed at [longest time in Fig. 4(a)]. The open symbols refer to implanted samples, while the closed ones pertain to the reference undamaged specimens.

Image of FIG. 7.
FIG. 7.

Logarithm of the annealing time vs reciprocal temperature for a fixed amount of recovery of the hole density in stage . The activation energy satisfactorily fits both B concentrations.

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/content/aip/journal/jap/100/3/10.1063/1.2220719
2006-08-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/3/10.1063/1.2220719
10.1063/1.2220719
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