Example of output (top) and transfer (bottom, ) characteristics for FET made of thin RR-P3HT films (here prepared by spin coating from TCB). ( vs graph: open circles =experimental data; solid black line =fit line).
TM-AFM height images (vertical grayscale=) within the FET channel for deposits prepared by dip coating: (a) from 1,2,4-TCB; (b) from -xylene (inset: zoom image); (c) from chloroform. (d): Schematic representation of the crystallization of RR-P3HT chains into one fibril (one dimensional-lamella), due to stacking of the conjugated backbones and the interdigitation of the alkyl groups.
TM-AFM height images (vertical grayscale=) within the channel of FETs prepared: Left: drop-cast films: (a) from 1,2,4-TCB; (b) from -xylene. Right: spin-coated films: (c) from -xylene; (d) from chloroform.
TM-AFM height (left) and phase (right) images of dip-coated films from -xylene, at the interface.
Average hole mobility and current on/off ratio ( on/off) of RR-P3HT FET using different preparation methods and different solvents. Since the values have been determined testing different FETs, the errors on the charge mobility values are noted below each value.
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