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Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications
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10.1063/1.2227261
/content/aip/journal/jap/100/3/10.1063/1.2227261
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/3/10.1063/1.2227261
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Influence of target to substrate spacing on the composition (from EDX analysis). Note: The solid line is only a guide to the eyes.

Image of FIG. 2.
FIG. 2.

XRD spectrum of CuCl film deposited at a target to substrate distance of .

Image of FIG. 3.
FIG. 3.

Variation in FWHM of (111) peak with target to substrate spacing (grain size in the right axis).

Image of FIG. 4.
FIG. 4.

Variation in the FWHM of the (111) XRD peak of CuCl thin films with sputtering pressure (grain size in the right axis).

Image of FIG. 5.
FIG. 5.

AFM topographs of CuCl films grown at different sputtering pressures of (a) and (b) (scale bar = 1 μm).

Image of FIG. 6.
FIG. 6.

Schematic representation of the “particle-particle” and “grain-grain” interfaces.

Image of FIG. 7.
FIG. 7.

CL spectra of CuCl films deposited at different sputtering pressures of (a) , (b) , and (c) .

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/content/aip/journal/jap/100/3/10.1063/1.2227261
2006-08-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/3/10.1063/1.2227261
10.1063/1.2227261
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