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Damage accumulation in neon implanted silicon
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10.1063/1.2220644
/content/aip/journal/jap/100/4/10.1063/1.2220644
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/4/10.1063/1.2220644
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-sectional TEM bright field micrograph of implanted silicon sample with Ne at room temperature at . No additional anneal. Superposed, the neon concentration and the displacement per atom (dpa) derived from SRIM calculation.

Image of FIG. 2.
FIG. 2.

(Color online) RBS/C spectra from (100) silicon samples implanted at room temperature with ions at the indicated fluences.

Image of FIG. 3.
FIG. 3.

(Color online) WDS spectra from (100) silicon samples implanted with ions at the indicated fluences before and after annealing at for .

Image of FIG. 4.
FIG. 4.

(Color online) Maximum damage accumulation vs implanted fluence obtained from RBS/C spectra from (100) silicon samples implanted at with ions.

Image of FIG. 5.
FIG. 5.

(Color online) Cross-sectional TEM micrographs of implanted silicon samples with Ne at without additional anneal: at (a) and (b). Also shown are the superposed neon concentration and the dpa derived from SRIM calculation for fluence of .

Image of FIG. 6.
FIG. 6.

Plan view TEM micrograph of implanted silicon sample with Ne at room temperature at and annealed at for .

Image of FIG. 7.
FIG. 7.

Cross-sectional TEM micrographs of implanted silicon samples with Ne at : at (a), at (b), at (c), and at (d) and annealed at for . Kinematical diffraction condition: underfocus.

Image of FIG. 8.
FIG. 8.

Cross-sectional TEM weak beam dark field image of implanted silicon sample with Ne at Ti= at and annealed at for .

Image of FIG. 9.
FIG. 9.

(Color online) RBS/C spectra from (100) silicon samples implanted at with ions at the indicated fluences and annealed at for .

Image of FIG. 10.
FIG. 10.

(Color online) Model of the SPEG process of Ne implanted silicon as implanted (a), initialization of the SPEG process during annealing (b), formation of neon bubbles (c), SPEG stopped and polycrystals formation (d), residual defects after annealing (e).

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/content/aip/journal/jap/100/4/10.1063/1.2220644
2006-08-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage accumulation in neon implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/4/10.1063/1.2220644
10.1063/1.2220644
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