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Evidence for electrical spin tunnel injection into silicon
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10.1063/1.2229870
/content/aip/journal/jap/100/4/10.1063/1.2229870
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/4/10.1063/1.2229870
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Structural schematic of the fabricated silicon device. The injector-detector separation is and the injector-control separation is . Electrons enter from the injector and exit through the detector. The control contact determines the voltage of the silicon and therefore the relative applied voltage across the injector and detector tunnel barriers. At , the voltage drop across each of the barriers is approximately equal.

Image of FIG. 2.
FIG. 2.

(Color online) Typical example of the detector-control characteristics with the injector contact floating and the control at ground for the -type Si. The dots are measured data points and the solid red and blue lines are fits to Eqs. (1) and (2), respectively, according to the region the data are in. (Inset shows the circuit diagram for these measurements where the single blue arrow indicates the “fixed” magnetic layer and the double-headed blue arrow indicates the “free” magnetic layer.)

Image of FIG. 3.
FIG. 3.

(Color online) The raw injector current (red dots) as a function of applied magnetic field for the -type Si in (top) the dominantly hopping conduction regime at and and (bottom) the dominantly Fowler-Nordheim tunneling regime at and . Half of a hysteresis loop as measured on a VSM is shown by the blue triangles. The green arrow indicates the direction of the magnetic field sweep of the measurements, following saturation at fields and the dotted vertical lines show the region of antiparallel alignment. [Inset for (a) shows the circuit diagram for these measurements where the encircled “A” represents an ammeter. The single blue arrow indicates the “fixed” magnetic layer and the double-headed blue arrow indicates the “free” magnetic layer.]

Image of FIG. 4.
FIG. 4.

(Color online) The injector current (red dots) as a function of applied magnetic field for the -type Si after correction for LMR at and (in the dominantly Fowler-Nordheim tunneling regime). Half of a hysteresis loop as measured on a VSM is shown by the blue triangles. The green arrow indicates the direction of the magnetic field sweep of the measurements, following saturation at fields and the dotted vertical lines show the region of antiparallel alignment. (Note that correcting the hopping conduction data for LMR only reduces the antiparallel alignment values slightly. The changes are within the error bars and are therefore not significant.)

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/content/aip/journal/jap/100/4/10.1063/1.2229870
2006-08-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence for electrical spin tunnel injection into silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/4/10.1063/1.2229870
10.1063/1.2229870
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