1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to
Rent:
Rent this article for
USD
10.1063/1.2335507
/content/aip/journal/jap/100/4/10.1063/1.2335507
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/4/10.1063/1.2335507
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage-temperature characteristics of nonalloyed contacts on .

Image of FIG. 2.
FIG. 2.

Donor concentrations as a function of the depth for (a) the deep-donor-assisted tunneling (DDAT) and (b) shallow-donor-assisted tunneling (SDAT) models calculated by the relations of (1)–(3).

Image of FIG. 3.
FIG. 3.

Plots of the experimental and theoretical values of the specific contact resistance as a function of on the assumption of the FE mode. The solid and dashed lines denote theoretical results, while the open circles indicate experimental data.

Loading

Article metrics loading...

/content/aip/journal/jap/100/4/10.1063/1.2335507
2006-08-30
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/4/10.1063/1.2335507
10.1063/1.2335507
SEARCH_EXPAND_ITEM