Structural formula of the silicon groups of relevance for this work.
Topographies (determined via atomic force microscopy; left) and infrared absorption spectra (determined in the attenuated transmission mode; right) of an Si surface (up) and of the same surface after exposure to at for 3 min (down).
The proposed mechanism for the oxidation in air at room temperature of silicon (“one-electron bonds” in the butterfly complex in 6 are shown as dotted sticks).
The hypothesized oxidation pathway at the silicon surface—promoted by a silanol, catalyzed by , and carried out by .
(a) Suboxide formation kinetics for a few values of , equally spaced in the interval , for assigned initial condition ; (b) influence on the oxidation kinetics of the initial coverage on surfaces where the suboxide is organized in clusters whose perimeter has fractal dimension of 1; (c) influence on the oxidation kinetics of the initial coverage in the hypothesis that silanols are mobile on the surface (or that the suboxide is organized in clusters whose perimeter has fractal dimension of 2); and (d) dependence on the initial condition of the time required to oxidize half of the initially uncovered surface.
(a) Stoichiometric oxide formation kinetics for and different initial conditions [ and ] and (b) stoichiometric oxide formation kinetics for and different initial conditions [ and ].
(a) Oxide formation kinetics for , , , and three values of and (b) oxide formation kinetics for , , , and three values of .
Initial defective coverage as a function of ratio (with the time required to increase the suboxide coverage from to , and the characteristic time for suboxide formation).
The experimental oxidation kinetics in ambient conditions, of a surface initially largely oxidized and presumably rough, are compared with their theoretical description (full boxes, neutron activation analysis; empty boxes, x-ray photoelectron spectroscopy).
Morphology and roughness (standard deviation of the actual surface profile from the average plane) of Si after annealing at moderate-to-high temperature in .
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