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A model for oxidation kinetics in air at room temperature of hydrogen-terminated Si
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10.1063/1.2245191
/content/aip/journal/jap/100/5/10.1063/1.2245191
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/5/10.1063/1.2245191

Figures

Image of FIG. 1.
FIG. 1.

Structural formula of the silicon groups of relevance for this work.

Image of FIG. 2.
FIG. 2.

Topographies (determined via atomic force microscopy; left) and infrared absorption spectra (determined in the attenuated transmission mode; right) of an Si surface (up) and of the same surface after exposure to at for 3 min (down).

Image of FIG. 3.
FIG. 3.

The proposed mechanism for the oxidation in air at room temperature of silicon (“one-electron bonds” in the butterfly complex in 6 are shown as dotted sticks).

Image of FIG. 4.
FIG. 4.

The hypothesized oxidation pathway at the silicon surface—promoted by a silanol, catalyzed by , and carried out by .

Image of FIG. 5.
FIG. 5.

(a) Suboxide formation kinetics for a few values of , equally spaced in the interval , for assigned initial condition ; (b) influence on the oxidation kinetics of the initial coverage on surfaces where the suboxide is organized in clusters whose perimeter has fractal dimension of 1; (c) influence on the oxidation kinetics of the initial coverage in the hypothesis that silanols are mobile on the surface (or that the suboxide is organized in clusters whose perimeter has fractal dimension of 2); and (d) dependence on the initial condition of the time required to oxidize half of the initially uncovered surface.

Image of FIG. 6.
FIG. 6.

(a) Stoichiometric oxide formation kinetics for and different initial conditions [ and ] and (b) stoichiometric oxide formation kinetics for and different initial conditions [ and ].

Image of FIG. 7.
FIG. 7.

(a) Oxide formation kinetics for , , , and three values of and (b) oxide formation kinetics for , , , and three values of .

Image of FIG. 8.
FIG. 8.

Initial defective coverage as a function of ratio (with the time required to increase the suboxide coverage from to , and the characteristic time for suboxide formation).

Image of FIG. 9.
FIG. 9.

The experimental oxidation kinetics in ambient conditions, of a surface initially largely oxidized and presumably rough, are compared with their theoretical description (full boxes, neutron activation analysis; empty boxes, x-ray photoelectron spectroscopy).

Tables

Generic image for table
Table I.

Morphology and roughness (standard deviation of the actual surface profile from the average plane) of Si after annealing at moderate-to-high temperature in .

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/content/aip/journal/jap/100/5/10.1063/1.2245191
2006-09-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A model for oxidation kinetics in air at room temperature of hydrogen-terminated (1 0 0) Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/5/10.1063/1.2245191
10.1063/1.2245191
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