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Continuous-wave laser annealing of free-standing superlattice: Modification of optical, structural, and light-emitting properties
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10.1063/1.2336089
/content/aip/journal/jap/100/5/10.1063/1.2336089
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/5/10.1063/1.2336089
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of the as-prepared free-standing SL (notice the multiplication factor of 50), a wafer, and the free-standing SL after laser-induced crystallization (LA). The spectra are measured with small laser power.

Image of FIG. 2.
FIG. 2.

Raman spectra of the free-standing SL after laser-induced crystallization measured with two laser powers (6 and through a Gaussian spot). Notice the emission rising in the anti-Stokes region for the higher laser excitation power. The measurements were performed after long irradiation with a laser power of .

Image of FIG. 3.
FIG. 3.

(a) Temperature in the irradiated volume as a function of laser power (through a spot). Presented are data for the free-standing SL (after short and long LA periods) and for the free-standing film (from Ref. 16). Short LA corresponds to intense irradiation for several seconds leading to Si crystallization whereas long LA means an additional laser exposure to about for several minutes, which corresponds to a temperature of . (b) Raman bandwidth for the free-standing SL (long LA) and for the FSF as a function of temperature. (c) Raman band position for the free-standing SL (long LA) and for the FSF as a function of temperature. In plots (b) and (c), the symbols are the same and the solid line represents the temperature dependencies for from Ref. 24. The sample temperature was obtained from the ratio.

Image of FIG. 4.
FIG. 4.

(a) PL spectra of the as-prepared free-standing SL and the sample after short and long laser-annealing periods. The spectrum for the SL on a Si substrate is given for comparison (see open diamonds). (b) Light emission at as a function of laser power (through a spot). The symbols are the same as marked in plot (a).

Image of FIG. 5.
FIG. 5.

Light emission at as a function of temperature. The symbols are the same as marked in Fig. 3(a). The solid line represents the temperature dependence for blackbody radiation (BBR).

Image of FIG. 6.
FIG. 6.

(a) Absorption coefficient at of the free-standing SL as a function of laser power (through a spot). Shown are data for the as-prepared sample (open triangles) and for the laser-crystallized sample after laser annealings LA1–LA3. The periods of laser annealing are with and with for LA1, additional with for LA2, and additional with for LA3. The average temperature during these prolonged laser irradiations at was . (b) Absorption coefficient as a function of temperature. The temperature is obtained from the ratio. Shown are data for the laser-crystallized free-standing SL (solid symbols) and for the FSF (crosses, data from Ref. 16). (c) Laser-induced temperature as a function of the laser power absorbed by a unite volume. The symbols are the same for (a)–(c). The lines guide the eyes.

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/content/aip/journal/jap/100/5/10.1063/1.2336089
2006-09-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Continuous-wave laser annealing of free-standing Si∕SiO2 superlattice: Modification of optical, structural, and light-emitting properties
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/5/10.1063/1.2336089
10.1063/1.2336089
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