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Structure and thermoelectric properties of boron doped nanocrystalline thin film
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10.1063/1.2337392
/content/aip/journal/jap/100/5/10.1063/1.2337392
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/5/10.1063/1.2337392
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Surface topography of the nanocrystalline silicon-germanium thin film performed on the as-grown film by atomic force microscopy (AFM).

Image of FIG. 2.
FIG. 2.

X-ray diffraction pattern of boron doped nanocrystalline silicon-germanium thin film.

Image of FIG. 3.
FIG. 3.

The cross-sectional structure of boron doped nanocrystalline silicon-germanium thin film by transmission electron microscopy.

Image of FIG. 4.
FIG. 4.

The schematic of the microfabricated thermoelectric test structure. (a) Electrical conductivity and Seebeck coefficient, and (b) Thermal conductivity.

Image of FIG. 5.
FIG. 5.

The electrical conductivity dependence of temperature in the in-plane electrical conductivity of the boron doped silicon-germanium thin film ranging between 80 and .

Image of FIG. 6.
FIG. 6.

Seebeck coefficient dependence of temperature in the in-plane direction of the boron doped silicon-germanium thin film ranging between 130 and .

Image of FIG. 7.
FIG. 7.

The temperature amplitudes experienced by wide heaters deposited onto the reference and the boron doped nanocrystalline silicon-germanium thin film sample.

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/content/aip/journal/jap/100/5/10.1063/1.2337392
2006-09-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/5/10.1063/1.2337392
10.1063/1.2337392
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