Energy bands of a metal-insulator-semiconductor silicon tunneling diode.
Current density components of a metal-insulator-semiconductor tunneling diode in strong accumulation.
Comparison of the tunneling current density vs voltage relation of a -type MOS-TD (solid line) and the fitted simulation curves of the tunneling current density . The total current density (square dotted) is the sum of tunneling current densities to the minority band (triangle dotted), to the majority band (diamond dotted), and to the interface states (circle dotted).
Simulation of the surface band bending and the oxide voltage drop of a -type MOS-TD .
Simulation of the surface carrier concentration of electrons in a -type MOS-TD with respect to different current densities in the small-signal light-current response.
The measurement setup of the small-signal light-current response of EL MOS-TDs.
The response of light, i.e., the ratio of the modulated light amplitude to the modulated current density amplitude , of a -type silicon MOS-TD at the bias current density of .
The small-signal light-current response times with respect to different bias current densities (triangle, device A; square, device B) and the simulation curves (solid).
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