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Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

Energy bands of a metal-insulator-semiconductor silicon tunneling diode.

Image of FIG. 2.
FIG. 2.

Current density components of a metal-insulator-semiconductor tunneling diode in strong accumulation.

Image of FIG. 3.
FIG. 3.

Comparison of the tunneling current density vs voltage relation of a -type MOS-TD (solid line) and the fitted simulation curves of the tunneling current density . The total current density (square dotted) is the sum of tunneling current densities to the minority band (triangle dotted), to the majority band (diamond dotted), and to the interface states (circle dotted).

Image of FIG. 4.
FIG. 4.

Simulation of the surface band bending and the oxide voltage drop of a -type MOS-TD .

Image of FIG. 5.
FIG. 5.

Simulation of the surface carrier concentration of electrons in a -type MOS-TD with respect to different current densities in the small-signal light-current response.

Image of FIG. 6.
FIG. 6.

The measurement setup of the small-signal light-current response of EL MOS-TDs.

Image of FIG. 7.
FIG. 7.

The response of light, i.e., the ratio of the modulated light amplitude to the modulated current density amplitude , of a -type silicon MOS-TD at the bias current density of .

Image of FIG. 8.
FIG. 8.

The small-signal light-current response times with respect to different bias current densities (triangle, device A; square, device B) and the simulation curves (solid).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes