No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Characterization of oxide films on epitaxial faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
1.For example, see S. Yoshida, in Electric Refractory Materials, edited by Y. Kumashiro (Dekker, New York, 2000).
2.A. Gölz, G. Horstmann, E. Stein von Kamienski, and H. Kurz, Inst. Phys. Conf. Ser. 142, 633 (1996).
5.K. Kojima, H. Okumura, S. Kuroda, and K. Arai, J. Cryst. Growth 269, 367 (2004).
6.K. Kojima, H. Okumura, S. Kuroda, K. Arai, A. Ohi, and H. Akinaga, Mater. Sci. Forum 483–485, 93 (2005).
8.K. Fukuda, M. Kato, J. Senzaki, K. Kojima, and T. Suzuki, Mater. Sci. Forum 457–460, 1417 (2004).
10.H. Yano, T. Kimoto, and H. Matsunami, Mater. Sci. Forum 353–356, 627 (2001).
11.A. Poggi, F. Moscatelli, A. Scorzoni, G. Marino, R. Nipoti, and M. San-martin, Mater. Sci. Forum 527–529, 979 (2006).
15.Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, and T. Hattori, Mater. Sci. Forum 483-485, 585 (2005).
16.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).
18.T. Iida, Y. Tomioka, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, H. Okumura, and S. Yoshida, Jpn. J. Appl. Phys., Part 2 39, L1054 (2000).
22.For example, see J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, in Handbook of X-ray Photoelectron Spectroscopy, edited by J. Chastain, 2nd ed. (Perkin-Elmer, Minnesota, 1992).
26.The parameters selected for the C spectra were Lorentzian to Gaussian ratio of 0.1, a Lorentzian width of , and an asymmetry parameter value of zero. Best spectrum fits were obtained by using Gaussian widths of 0.58, 1.45, and for SiC, , and components, respectively.
27.The parameters selected for the Si spectra were a spin orbit splitting of , a branching ratio of 0.50, Lorentzian to Gaussian ratio of zero, and an asymmetry parameter value of zero. Best spectrum fits were obtained by using Gaussian widths of 0.55, 0.80, and for SiC, suboxide, and components, respectively.
29.Y. Hijikata, H. Yaguchi, M. Yoshikawa, and S. Yoshida, Mater. Sci. Forum 457–460, 1341 (2004).
30.Y. Hoshino, T. Nishimura, T. Yoneda, K. Ogawa, H. Namba, and Y. Kido, Surf. Sci. 505, 234 (2002).
31.The parameters selected for the Si spectra were Lorentzian to Gaussian ratio of 0.3, a Lorentzian width of , and an asymmetry parameter value of zero. Best spectrum fits were obtained by using Gaussian widths of 0.82, 1.05, and for SiC, suboxide, and components, respectively.
Article metrics loading...
Wet and dry oxide films- epitaxial C-face interfaces have been characterized by capacitance-voltage measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as and were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.
Full text loading...
Most read this month