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Carrier compensation and scattering mechanisms in Si-doped layers grown on InP substrates using intermediate step-graded buffers
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10.1063/1.2349358
/content/aip/journal/jap/100/6/10.1063/1.2349358
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/6/10.1063/1.2349358
/content/aip/journal/jap/100/6/10.1063/1.2349358
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/content/aip/journal/jap/100/6/10.1063/1.2349358
2006-09-22
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier compensation and scattering mechanisms in Si-doped InAsyP1−y layers grown on InP substrates using intermediate InAsyP1−y step-graded buffers
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/6/10.1063/1.2349358
10.1063/1.2349358
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