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Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM micrograph of InGaAs nanowhisker grown on GaAs (111)B substrate at at a ratio of 0.074. Whisker kinking and relaxed three-dimensional InGaAs layer between whisker structures are clearly observed.

Image of FIG. 2.
FIG. 2.

HR-XRD rocking curves of a sample grown (a) with and (b) without seed particles. Both samples were grown in the same run on (111)B GaAs substrate. A straight-line draw on curve (a) helps to imagine the contributions from the whiskers and the three-dimensional layer better.

Image of FIG. 3.
FIG. 3.

HR-XRD rocking curves of a sample with InGaAs whiskers “as grown” and after scratching them from the substrate.

Image of FIG. 4.
FIG. 4.

XRD rocking curves of InGaAs nanowhisker structures grown using various ratios. The inset shows the details of the XRD peak of a sample grown at a ratio of 0.452 in the linear scale.

Image of FIG. 5.
FIG. 5.

In concentration in nanowhiskers and three-dimensional InGaAs layer as a function of TMIn mole fraction in a total group-III gas flow, extracted from XRD measurements.

Image of FIG. 6.
FIG. 6.

HR-TEM: micrograph of nanowhisker at (a) the top and in (b) the middle. Dark contrast in (a) corresponds to the gold droplet. Resolved crystal planes perpendicular to the ⟨111⟩ direction in (b) allow defining the lattice parameter of InGaAs whisker, which gives an indium concentration of 27.6%.

Image of FIG. 7.
FIG. 7.

Low-temperature PL signal from an InGaAs nanowhisker sample with 14% In composition.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers