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Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects
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10.1063/1.2354327
/content/aip/journal/jap/100/7/10.1063/1.2354327
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/7/10.1063/1.2354327
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of GaN-based MOS-HEMT with gate dielectric.

Image of FIG. 2.
FIG. 2.

Simulated and experimental of MOS-HEMT. Experiment (circles) and simulation (solid lines) with thermodynamic and DG approaches for , 1, 2, and .

Image of FIG. 3.
FIG. 3.

(a) Simulated and experimental of MOS-HEMT. Experiment (circles) and simulations with thermodynamics (dash line) and without thermodynamics (solid line) for . (b) Experimental of MOS-HEMT with from .

Image of FIG. 4.
FIG. 4.

Comparisons of (a) simulated results and (b) electron density in the channel with DG quasi-quantum-mechanical method (solid lines) and classical method (dashed lines) under the same condition.

Image of FIG. 5.
FIG. 5.

(Color online) Cross section of GaN-based MOS-HEMT around the drain-side gate edge showing (a) electron mobility contour map and (b) electron temperature contour map at and . (c) along the vertical line segment (dashed line) under the arrow in (b). Dimensions of (a) and (b) in .

Image of FIG. 6.
FIG. 6.

Dependence of maximal lattice temperature on the gate lengths for the different source/drain extension lengths at and .

Image of FIG. 7.
FIG. 7.

Dependence of saturation drain current on the gate lengths for the different source/drain extension lengths at and .

Image of FIG. 8.
FIG. 8.

(Color online) Cross section of GaN-based MOS-HEMT with electron density contour maps comparing results predicted by (a) hot electron and (b) simple drift-diffusion simulations at the drain-side gate edge. The interface is at ; the interface is at . Dimensions in .

Image of FIG. 9.
FIG. 9.

Conduction band (left axis) and trapped electron density (right axis) vs direction position for and . and .

Image of FIG. 10.
FIG. 10.

Maximal electron temperature vs for . , (dashed line) and , (solid line).

Image of FIG. 11.
FIG. 11.

Electrostatic potential of the conduction channel vs direction position for the devices simulated in Fig. 8 for and . , (solid line) and , (dashed line).

Image of FIG. 12.
FIG. 12.

Drain current (left axis) and maximal lattice temperature (right axis) vs interface charge density for and . and .

Image of FIG. 13.
FIG. 13.

Drain current (left axis) and maximal lattice temperature (right axis) vs interface trap charge for and . , .

Image of FIG. 14.
FIG. 14.

(Color online) The pinch off state of GaN-based MOS-HEMT under a positive drain bias.

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/content/aip/journal/jap/100/7/10.1063/1.2354327
2006-10-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/7/10.1063/1.2354327
10.1063/1.2354327
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