Schematic structure of GaN-based MOS-HEMT with gate dielectric.
Simulated and experimental of MOS-HEMT. Experiment (circles) and simulation (solid lines) with thermodynamic and DG approaches for , 1, 2, and .
(a) Simulated and experimental of MOS-HEMT. Experiment (circles) and simulations with thermodynamics (dash line) and without thermodynamics (solid line) for . (b) Experimental of MOS-HEMT with from .
Comparisons of (a) simulated results and (b) electron density in the channel with DG quasi-quantum-mechanical method (solid lines) and classical method (dashed lines) under the same condition.
(Color online) Cross section of GaN-based MOS-HEMT around the drain-side gate edge showing (a) electron mobility contour map and (b) electron temperature contour map at and . (c) along the vertical line segment (dashed line) under the arrow in (b). Dimensions of (a) and (b) in .
Dependence of maximal lattice temperature on the gate lengths for the different source/drain extension lengths at and .
Dependence of saturation drain current on the gate lengths for the different source/drain extension lengths at and .
(Color online) Cross section of GaN-based MOS-HEMT with electron density contour maps comparing results predicted by (a) hot electron and (b) simple drift-diffusion simulations at the drain-side gate edge. The interface is at ; the interface is at . Dimensions in .
Conduction band (left axis) and trapped electron density (right axis) vs direction position for and . and .
Maximal electron temperature vs for . , (dashed line) and , (solid line).
Electrostatic potential of the conduction channel vs direction position for the devices simulated in Fig. 8 for and . , (solid line) and , (dashed line).
Drain current (left axis) and maximal lattice temperature (right axis) vs interface charge density for and . and .
Drain current (left axis) and maximal lattice temperature (right axis) vs interface trap charge for and . , .
(Color online) The pinch off state of GaN-based MOS-HEMT under a positive drain bias.
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