The sample structure used in this study. Thicknesses of the compositionally graded , , , and strained Si are 2.2, 1.5, , and , respectively.
Depth profiles of Ge composition (circles) and bandwidth (squares) of the angle-lapped sample obtained by the UV-Raman imaging. Raman frequencies were converted into Ge composition. Previous Raman (Ref. 21) (dashed line) data and SIMS (triangles) data are also plotted for comparison.
One-dimensional frequency variations of the heterostructure at given depths obtained by Raman imaging excited with the line. represents the depth from the top Si surface. The top picture shows the depth positions at which the Raman images (a)–(h) were obtained.
(a) Frequency and (b) bandwidth images of the layer obtained by Raman imaging with the excitation. The arrow in (a) indicates the ⟨110⟩ direction. The dashed lines specify the same regions in (a) and (b).
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