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Depth profiling of strain and defects in heterostructures by micro-Raman imaging
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10.1063/1.2355431
/content/aip/journal/jap/100/7/10.1063/1.2355431
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/7/10.1063/1.2355431
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The sample structure used in this study. Thicknesses of the compositionally graded , , , and strained Si are 2.2, 1.5, , and , respectively.

Image of FIG. 2.
FIG. 2.

Depth profiles of Ge composition (circles) and bandwidth (squares) of the angle-lapped sample obtained by the UV-Raman imaging. Raman frequencies were converted into Ge composition. Previous Raman (Ref. 21) (dashed line) data and SIMS (triangles) data are also plotted for comparison.

Image of FIG. 3.
FIG. 3.

One-dimensional frequency variations of the heterostructure at given depths obtained by Raman imaging excited with the line. represents the depth from the top Si surface. The top picture shows the depth positions at which the Raman images (a)–(h) were obtained.

Image of FIG. 4.
FIG. 4.

(a) Frequency and (b) bandwidth images of the layer obtained by Raman imaging with the excitation. The arrow in (a) indicates the ⟨110⟩ direction. The dashed lines specify the same regions in (a) and (b).

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/content/aip/journal/jap/100/7/10.1063/1.2355431
2006-10-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth profiling of strain and defects in Si∕Si1−xGex∕Si heterostructures by micro-Raman imaging
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/7/10.1063/1.2355431
10.1063/1.2355431
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