Conceptual structure of a BioFET.
Equivalent circuit model for the semiconductor-insulator-electrolyte interface (Ref. 9).
Equivalent circuit model for the electrode-electrolyte interface (Ref. 10).
Equivalent circuit model for the semiconductor-insulator-electrolyte-electrode system.
Complete equivalent circuit model for the BioFET showing the various noise contributions.
Calculated BioFET low-frequency noise spectral density at at three different drain biasing points.
Calculated low-frequency mean-square noise in the frequency range for a BioFET (solid line) and thermal noise from the electrolyte resistance for three different NaCl concentrations (dashed lines).
Signal to low-frequency noise ratio for a BioFET as a function of the applied bias potential.
Calculated low-frequency mean-square noise in the frequency range vs BioFET gate area (solid line) and thermal noise from the electrolyte resistance with a NaCl concentration (dashed line) at threshold.
Parameter values for BioFET membrane model.
Calculated values of the BioFET small-signal model elements (the values of and are for gate area).
Parameter values used in the charge sheet model.
Parameter values for noise calculations.
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