(a) The nanopillar structure studied in this work and (b) the structure as a comparison. The arrows in (a) and (b) represent the direction of the magnetization.
MR and loops for nanopillars with structure B [(a) and (c)] and structure A [(b) and (d)], respectively. The arrows represent the sweeping direction of the external field or the dc current. The dashed lines in (a) and (b) are the minor loops. In (a) and (b), the solid lines are obtained with sweeping the field from the positive to the negative while the dotted lines are obtained with the opposite sweeping direction. The solid line and the dashed line in (c) are measured under external fields 330 and , respectively. The solid circles in all the figures indicate the point where the measurement starts.
(a) The resistance dependence on the external field and (b) the magnetic configuration for the D state.
(a) dependence on for the nanopillar with structure A at the external field of . The arrows represent the sweeping direction of the external field or the dc current. (b) and (c) are the resistance dependences on the external field for states E and F, respectively.
The evolution of the magnetic configuration corresponding to Fig. 4(a).
dependences on for the nanopillar with structure A at the external fields of (a) and (b) , respectively.
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