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Single phase nanocrystalline GaMnN thin films with high Mn content
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Image of FIG. 1.
FIG. 1.

(Color online) SIMS elemental depth profile of a GaMnN thin film. The Mn and Ga profiles are roughly uniform, and there is a slight increase of O at the film surface.

Image of FIG. 2.
FIG. 2.

XRD spectrum from a GaMnN film on Si. The spectrum was taken at grazing incidence x-ray angle to remove sharp scattering peaks from the crystalline substrate.

Image of FIG. 3.
FIG. 3.

TEM micrograph of the film deposited on a Si substrate. The dark layer at the top of the film is a protective Pt coating layer added before focussed ion beam (FIB) thinning of the film. The measurement bar is shown for scale.

Image of FIG. 4.
FIG. 4.

High-resolution TEM image of a crystallite in the film. The crystallite has sides long.

Image of FIG. 5.
FIG. 5.

Fourier transform of EXAFS measurements taken at Ga and Mn edges for the film. The squares are the experimental data and the lines are best fits to the data using a model of four N nearest neighbors and 12 Ga next nearest neighbors. The best fit parameters are printed in Table II.

Image of FIG. 6.
FIG. 6.

Simulations of the pseudo-radial-distribution-functions for , , and GaN and the Fourier-transformed Mn edge experimental data from the film. The experimental data are significantly different from the Mn-containing phases, but closely resemble the GaN simulation.


Generic image for table
Table I.

Compositions of films in this study as determined by RBS and NRA.

Generic image for table
Table II.

EXAFS parameters for a model of wurtzite GaN fitted to the Ga and Mn edges of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single phase nanocrystalline GaMnN thin films with high Mn content