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(Color online) SIMS elemental depth profile of a GaMnN thin film. The Mn and Ga profiles are roughly uniform, and there is a slight increase of O at the film surface.
XRD spectrum from a GaMnN film on Si. The spectrum was taken at grazing incidence x-ray angle to remove sharp scattering peaks from the crystalline substrate.
TEM micrograph of the film deposited on a Si substrate. The dark layer at the top of the film is a protective Pt coating layer added before focussed ion beam (FIB) thinning of the film. The measurement bar is shown for scale.
High-resolution TEM image of a crystallite in the film. The crystallite has sides long.
Fourier transform of EXAFS measurements taken at Ga and Mn edges for the film. The squares are the experimental data and the lines are best fits to the data using a model of four N nearest neighbors and 12 Ga next nearest neighbors. The best fit parameters are printed in Table II.
Simulations of the pseudo-radial-distribution-functions for , , and GaN and the Fourier-transformed Mn edge experimental data from the film. The experimental data are significantly different from the Mn-containing phases, but closely resemble the GaN simulation.
Compositions of films in this study as determined by RBS and NRA.
EXAFS parameters for a model of wurtzite GaN fitted to the Ga and Mn edges of .
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