1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates
Rent:
Rent this article for
USD
10.1063/1.2358003
/content/aip/journal/jap/100/8/10.1063/1.2358003
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/8/10.1063/1.2358003
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of QDM structures grown on unpatterned Si substrates at and . (b) Three dimensional (3D) representation of a section from (a) showing the profile of a structure. Edges of the AFM image are approximately aligned along the ⟨100⟩ directions.

Image of FIG. 2.
FIG. 2.

AFM images and representative line scans from sections of FIB patterned hole arrays with total milling times of 10, 5, and , incident ion energy of , and ion current. Distances between milled sites are . Line scans are offset for clarity.

Image of FIG. 3.
FIG. 3.

SEM images of film grown at and on a Si buffer layer and FIB array of holes with a spacing of and an initial calculated hole depth of approximately before buffer growth. Spacings for each section of each array are (a) , (b) , (c) , and (d) . Edges of the SEM images are approximately aligned along the ⟨110⟩ directions.

Image of FIG. 4.
FIG. 4.

AFM images of film grown at and on a Si buffer layer for (a) unpatterned region outside of the FIB array. (b) Patterned region within the array (initial calculated FIB hole depths of approximately before buffer growth). (c) Line scan measurements done on the two QDM structures taken from each AFM image. (d) The surface angle relative to (001) from the line scan data. Note that the edges of the AFM images are approximately aligned along the ⟨110⟩ directions while measurements were taken along the ⟨100⟩ directions.

Image of FIG. 5.
FIG. 5.

AFM images of (a) Si buffer layer grown on FIB array of holes with a spacing of and an initial calculated FIB hole depth of approximately before buffer growth. Surface after growth at and for (, (c) , and (d) film thicknesses. Edges of the AFM images are approximately aligned along the ⟨110⟩ directions.

Image of FIG. 6.
FIG. 6.

(a) AFM sample line scan measurements taken from a single representative QDM structure from the AFM images in Figs. 5(b)–5(d). (b) The surface angle relative to (001) from the line scan data. Measurements were taken along the ⟨100⟩ directions.

Image of FIG. 7.
FIG. 7.

AFM line scan measurements done on two representative QDM structures (shallow and deep) from film grown at and from a spaced FIB array. Initial calculated FIB hole depth was approximately . Inset of AFM image: the edges are approximately aligned along the ⟨110⟩ directions. Measurements were taken along the ⟨100⟩ directions.

Image of FIG. 8.
FIG. 8.

AFM image of a Si buffer layer grown over a FIB array of holes with a spacing of and an initial calculated hole depth of approximately before buffer growth.

Image of FIG. 9.
FIG. 9.

AFM images of a film grown at and on Si buffer and FIB array of holes with a spacing of and initial calculated approximate hole depths of (a) , (b) , (c) , and (d) , corresponding to total array milling times of (a) , (b) , (c) , and (d) .

Image of FIG. 10.
FIG. 10.

AFM images of (a) film grown at and on spaced FIB patterned array with total milling time of . (b) film grown at and on spaced FIB patterned array with total milling time of .

Image of FIG. 11.
FIG. 11.

AFM images of a film grown at and on Si buffer layer and FIB array of holes with spacings of (a) and (b) and an initial calculated hole depth of approximately . (c) Line scans of representative structures from each image, offset for clarity.

Image of FIG. 12.
FIG. 12.

AFM images of film grown at and on a Si buffer layer for more complex, nonperiodic FIB substrate patterns. Initial calculated hole depths were approximately before buffer growth.

Loading

Article metrics loading...

/content/aip/journal/jap/100/8/10.1063/1.2358003
2006-10-20
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/8/10.1063/1.2358003
10.1063/1.2358003
SEARCH_EXPAND_ITEM