The scattering geometry of the GISAXS. The linear detector is placed parallel to the sample surface to measure the scattering as a function of .
The real-time GISAXS evolution of the sapphire surface during Ga adsorption and desorption at . The scan was taken at .
Selected GISAXS scans during desorption after Ga exposure.
Selected slices from the real-time GISAXS scans at , which shows the evolution of the surface morphology during desorption.
The Guinier plot obtained from the GISAXS measurement taken after the Ga deposition has terminated. The solid line indicates the linear fit to the data.
Fourier transform of the measured GISAXS at , which gives approximately the real-space electron density correlation. The peak at indicates the average spacing between droplets and the intensity decay at smaller values corresponds to the electron density distribution of individual droplets.
The AFM analysis of the Ga nanodots on sapphire, showing a AFM topograph.
The intensity evolution of the (a) near-specular and (b) diffuse parts of the GISAXS profiles in the predroplet regime as a function of Ga exposure time. The sapphire substrate temperature was .
The intensity evolution of the near-specular part of the GISAXS profile during Ga adsorption∕desorption on GaN at .
Illustrations of possible Ga desorption models: (a) coalescence and (b) inhomogeneous desorption.
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