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Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures
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10.1063/1.2358397
/content/aip/journal/jap/100/8/10.1063/1.2358397
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/8/10.1063/1.2358397
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Semilogarithmic plot of the PL spectra at of the series of hydrogenated samples ( and ) at different H doses: , , , and . (b) Dependence of on .

Image of FIG. 2.
FIG. 2.

(a) Semilogarithmic plot of the PL spectra at of the series of hydrogenated samples ( and ) at different H doses: , , and at the onset of the state filling condition. The arrow indicates the recombination from the first excited states in the QDs. (b) Comparison of the PL enhancement vs H doses for nonresonant (solid symbols) and resonant (empty symbols) PL excitation.

Image of FIG. 3.
FIG. 3.

Time evolution of the PL after pulse excitation at of the and sample. In the inset the time resolved spectra at 0 and delay times after the pulse are reported for the sample.

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/content/aip/journal/jap/100/8/10.1063/1.2358397
2006-10-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/8/10.1063/1.2358397
10.1063/1.2358397
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