A plane-view AFM image of the Si-QD array after the gate layer was removed by diluted HF solution.
A cross section TEM image of the layered structure with white dashed circles as an eye’s guide for identification of Si QDs embedded in the amorphous matrix. The HR-TEM image of a Si QD is also shown in the left inset.
(a) Typical curves for the original sweep (upper one) and the second sweep after interval (lower one, offset to avoid overlap). The “sharp-edged platformlike” peaks are divided into two regions according to their positions in voltage. The schematic band diagram is shown in the top-left inset. (b) The accumulative injected charges for the original sweep (solid) and the second sweep (dashed) as a function of the voltage ramp.
(a) Illustrations for the weak coupling induced subbands in the Si-QD array, and for the different NOS for the -state and -state subbands due to different coupling strengths. (b) The number of Si QDs in the largest coupled ensemble vs the different threshold interdot distances . The dashed lines indicate the interdot distances, and , required to reach the threshold coupling strength of for the states and the states, respectively.
Typical frequency-dependent characteristics of the annealed sample measured at different ac frequencies.
The list of experiment data of the platformlike peaks: the onset position ; the spacing between peaks in the same region, ; the spacing between the two regions, ; and the current jump at the onset of each peak, . The calculated results: the injected charge for each peak, , and the conductance increment at the onset of each peak, .
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