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Coupling induced subband structures and collective single electron behavior in a single layer Si quantum dot array
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10.1063/1.2359205
/content/aip/journal/jap/100/8/10.1063/1.2359205
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/8/10.1063/1.2359205

Figures

Image of FIG. 1.
FIG. 1.

A plane-view AFM image of the Si-QD array after the gate layer was removed by diluted HF solution.

Image of FIG. 2.
FIG. 2.

A cross section TEM image of the layered structure with white dashed circles as an eye’s guide for identification of Si QDs embedded in the amorphous matrix. The HR-TEM image of a Si QD is also shown in the left inset.

Image of FIG. 3.
FIG. 3.

(a) Typical curves for the original sweep (upper one) and the second sweep after interval (lower one, offset to avoid overlap). The “sharp-edged platformlike” peaks are divided into two regions according to their positions in voltage. The schematic band diagram is shown in the top-left inset. (b) The accumulative injected charges for the original sweep (solid) and the second sweep (dashed) as a function of the voltage ramp.

Image of FIG. 4.
FIG. 4.

(a) Illustrations for the weak coupling induced subbands in the Si-QD array, and for the different NOS for the -state and -state subbands due to different coupling strengths. (b) The number of Si QDs in the largest coupled ensemble vs the different threshold interdot distances . The dashed lines indicate the interdot distances, and , required to reach the threshold coupling strength of for the states and the states, respectively.

Image of FIG. 5.
FIG. 5.

Typical frequency-dependent characteristics of the annealed sample measured at different ac frequencies.

Tables

Generic image for table
Table I.

The list of experiment data of the platformlike peaks: the onset position ; the spacing between peaks in the same region, ; the spacing between the two regions, ; and the current jump at the onset of each peak, . The calculated results: the injected charge for each peak, , and the conductance increment at the onset of each peak, .

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/content/aip/journal/jap/100/8/10.1063/1.2359205
2006-10-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coupling induced subband structures and collective single electron behavior in a single layer Si quantum dot array
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/8/10.1063/1.2359205
10.1063/1.2359205
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