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Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) A schematic illustration of a NEMS memory device incorporating nanocrystalline-Si dots.

Image of FIG. 2.
FIG. 2.

(a) A schematic illustration of the NEMS memory cell model used in the on-off ratio calculation. The position of the beam in “On” and “Off” states is lower or higher than the center between surfaces of control gate and substrate in the cavity. (b) Equivalent circuit of the NEMS memory cell. The dashed line shows the position of the surface of the substrate. is the capacitance of the depletion layer. (c) Calculated surface potential as a function of applied gate voltage . The solid and dashed lines correspond to the On and Off states, respectively. Cases at the semiconductor surface in a certain range are depicted on the right hand side with arrows.

Image of FIG. 3.
FIG. 3.

(Color online) (a) A 3D image of a nc-Si beam model used in this calculation. The 2D array of spheres (nc-Si dots) is clearly identified in the sheet . (b) An image of a poly-Si beam model in which a thin sheet (Si) is placed between two layers. The fine lines in the figures show the boundary of the mesh used in this study.

Image of FIG. 4.
FIG. 4.

(Color online) A calculated 3D image of the nc-Si beam model deformed under a constant homogeneous load parallel to the axis. Dark area around the center of the beam was largely deformed.

Image of FIG. 5.
FIG. 5.

A displacement of the beam was plotted as a function of applied load parallel to the axis. Abrupt change of the displacement of the beam and clear hysteresis were observed, which are due to the mechanical bistable nature of the beam. The images above and below the figure are the shape of upward-bent beam at the Off state and that of downward-bent beam at the On state, respectively.

Image of FIG. 6.
FIG. 6.

Elastic potential as a function of the displacement of the beam. Double minimum structure which is characteristic of the system bistability is clearly observed.

Image of FIG. 7.
FIG. 7.

The oscillation frequencies of the beam as a function of the beam length are shown for beams with three different widths; 0.5, 1.0, and .

Image of FIG. 8.
FIG. 8.

(a) A schematic illustration of a single layer structure fabricated by etching of Si underneath using plasma. The SEM images of (b) an upward-bent thermally grown beam, (c) a PECVD-grown beam with no bending, and (d) a downward-bent thermally grown beam. Only thermally grown beams show bending after undercutting.

Image of FIG. 9.
FIG. 9.

The SEM images of beams (a) before and (b) after being loaded with the tip of the nanoindenter around the center of the beam. The schematic cross-sectional illustrations are shown together. The dashed lines along the edges of the beams are the guides to the eyes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots