(Color online) BS spectra taken on ion implanted by beam at channeling direction. Due to the elevated cross section of carbon at this energy, the disorder in the carbon sublattice is also well visible (from channels 90 to 140 approximately). The samples were implanted by Al ions with fluences of , , and with ion current density of . Spectra recorded on (a) as-implanted and (b) annealed ( at for ) samples.
Measured (symbols) and fitted (solid lines) ellipsometric data in the spectral range of . The two parameters, and are shown. The angle of incidence was 75.1°.
Cross-sectional images taken on the as-implanted sample. (a) Dark field image showing the whole implanted region, (b) high resolution image taken on the surface region, and (c) high resolution image taken at the end of implantation range showing the amorphized/crystalline interface.
Cross-sectional TEM images corresponding to the annealed samples: (a) , (b) , and (c) .
HREM image from a region of the implanted sample after annealing. Different SiC polytypes can be observed.
Relative damage determined by SE, RBS, and observed by TEM.
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