1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy
Rent:
Rent this article for
USD
10.1063/1.2360150
/content/aip/journal/jap/100/9/10.1063/1.2360150
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/9/10.1063/1.2360150

Figures

Image of FIG. 1.
FIG. 1.

(Color online) BS spectra taken on ion implanted by beam at channeling direction. Due to the elevated cross section of carbon at this energy, the disorder in the carbon sublattice is also well visible (from channels 90 to 140 approximately). The samples were implanted by Al ions with fluences of , , and with ion current density of . Spectra recorded on (a) as-implanted and (b) annealed ( at for ) samples.

Image of FIG. 2.
FIG. 2.

Measured (symbols) and fitted (solid lines) ellipsometric data in the spectral range of . The two parameters, and are shown. The angle of incidence was 75.1°.

Image of FIG. 3.
FIG. 3.

Cross-sectional images taken on the as-implanted sample. (a) Dark field image showing the whole implanted region, (b) high resolution image taken on the surface region, and (c) high resolution image taken at the end of implantation range showing the amorphized/crystalline interface.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM images corresponding to the annealed samples: (a) , (b) , and (c) .

Image of FIG. 5.
FIG. 5.

HREM image from a region of the implanted sample after annealing. Different SiC polytypes can be observed.

Tables

Generic image for table
Table I.

Relative damage determined by SE, RBS, and observed by TEM.

Loading

Article metrics loading...

/content/aip/journal/jap/100/9/10.1063/1.2360150
2006-11-03
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/9/10.1063/1.2360150
10.1063/1.2360150
SEARCH_EXPAND_ITEM