Structures for compounds of this report. A 1:1 mixture of 3,9-DNP and 3,10-DNP is abbreviated as “DNP.”
EL spectra at various DBP concentrations in TBADN (Ref. 12) and at . The labels indicate vol % DBP.
EL spectra at various DNP or AP concentrations in TBADN (Ref. 12) at . The labels indicate vol % of the additives.
Effect of DBP additive on fade at (ac; ). HTL is NPB. LEL is or . ETL is or or Li .
EL spectra for the undoped host and the undoped DBP mixed host and PL spectrum for C545T in (devices 1, 8, and 2). Inset: PL spectra for C545T in and in DBP (devices 2 and 9).
An example of the two-component fitting of the raw EL spectrum of device 5 using the EL spectrum of the host and the PL spectrum of C545T in the host. The host is , and the first of the LEL (next to the HTL) is doped with C545T.
An example of the two-component fitting of the raw EL spectrum of device 12 using the EL spectrum of the host and the PL spectrum of C545T in the host. The host is DBP and the first of the LEL (next to the HTL) is doped with C545T.
Dopant vs host EL intensity for various thicknesses and locations of the C545T sensing layer (two series for and three series for the mixed host). The same arbitrary units, proportional to photon flux, are used for both.
Dopant emission as a function of sensing layer location relative to the HTL∣LEL interface (devices 3–7 and 10–14). Intensity is normalized to unity when entire LEL is doped (devices 2 and 9).
Profile of the emission zone in and DBP: intensity integrated from the HTL∣LEL interface to various depths. Integrals over the entire LEL are normalized to unity. The curves are guides for the eye.
Performance of devices: EL spectrum and EQE at and half-life at (ac; ) (Ref 12). (Device EL is entirely that of a PAH aggregate.)
Performance of and devices at and half-lives at (ac; ).
LEL structures. Location is indexed from HTL side. Doped sublayer contains 0.5% C545T. Device structure: .
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