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Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells
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10.1063/1.2363684
/content/aip/journal/jap/100/9/10.1063/1.2363684
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/9/10.1063/1.2363684

Figures

Image of FIG. 1.
FIG. 1.

Multiple internal reflection geometry used for IR measurements.

Image of FIG. 2.
FIG. 2.

IR spectra for Si:Pt samples hydrogenated from a H-rich layer. The intensity of the IR line at permits the concentration of H bound to defects in the bulk of the Si sample to be determined. Spectra (a) and (c) are for layers deposited with a reactor, and (b), (d), and (e) are for layers deposited at . Samples (a) and (b) were furnace annealed (, ), and (c)–(e) received a rapid thermal anneal (, ). Samples (d) and (e) were with and without an Al back-surface layer, respectively.

Image of FIG. 3.
FIG. 3.

(a) IR spectra showing the vibrational lines of the complex in a Si:Pt sample hydrogenated by the postdeposition annealing of a layer deposited by PECVD. Spectra were measured after surface layers of the indicated thicknesses had been removed from the sample. (b) The areal density of complexes remaining in the sample vs the thickness of the layer removed from the surface, derived from the data shown in (a).

Image of FIG. 4.
FIG. 4.

The areal density of complexes present in Si:Pt samples hydrogenated by the postdeposition annealing of layers deposited by PECVD . Samples were annealed by RTP for the times indicated. Samples were thinned successively to determine the penetration depth of H by IR measurements made at normal incidence.

Image of FIG. 5.
FIG. 5.

(a) IR spectra showing the vibrational lines of the complex in a Si:Pt sample hydrogenated by exposure to a hydrogen plasma (, ). Spectra were measured after surface layers of the indicated thicknesses had been removed from the sample. (b) The areal density of complexes remaining in the sample vs the thickness of the layer removed from the surface, derived from the data shown in (a).

Image of FIG. 6.
FIG. 6.

IR spectrum of the vacancy- complex observed in a Si sample that was hydrogenated by the postdeposition annealing (RTP, , ) of a layer deposited in a reactor.

Image of FIG. 7.
FIG. 7.

(Color online) Diffusion constant for H in Si. The straight line corresponds to the diffusion constant given in Eq. (3), determined near by Van Wieringen and Warmoltz (◆) (Ref. 48). Values of determined in the present studies are shown by crossed circles (⊗) at 600, 700, and , and (⊕) at 500 and . Data from Seager et al. (●) (Ref. 50) and Gorelkinskii and Nevinnyi (Ref. 51, not shown) are consistent with Eq. (3) and have been attributed to the diffusivity of isolated (Refs. 29 and 49). Values for determined in several other studies are also shown. These values have been attributed to an effective diffusivity for H that is limited by trapping (Ref. 29). See Ichimiya and Furuichi (▵) (Ref. 53), Pearton (▴) (Ref. 54), Mogro-Campero et al. (×) (Ref. 55), Newman et al. (◇) (Ref. 56), Zundel and Weber (∎) (Ref. 57), Johnson and Herring (+) (Ref. 58), Huang et al. (▾) (Ref. 59), Sopori et al. for floating-zone Si (엯) (Ref. 60), and Sopori et al. for Czochralski Si (□) (Ref. 60).

Tables

Generic image for table
Table I.

Results for the introduction of H into Si from an annealed layer. Deposition method, sample characteristics, annealing treatment, and the areal density of complexes as determined from the area of the vibrational line are shown.

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/content/aip/journal/jap/100/9/10.1063/1.2363684
2006-11-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/9/10.1063/1.2363684
10.1063/1.2363684
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