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Contactless electroreflectance of single quantum wells with indium content of 8%–32%
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10.1063/1.2382721
/content/aip/journal/jap/101/1/10.1063/1.2382721
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2382721

Figures

Image of FIG. 1.
FIG. 1.

Energy-band diagram in real space for compressively strained QWs.

Image of FIG. 2.
FIG. 2.

(004) HRXRD spectra of QWs with varying indium concentrations.

Image of FIG. 3.
FIG. 3.

Indium, nitrogen, and antimony compositions as a function of the intended indium content.

Image of FIG. 4.
FIG. 4.

Top panel: Room temperature CER spectra of the SQW with 8% In content (solid line) together with the fitting curve (thick line) and the moduli of individual CER resonances (dashes lines). Bottom panel: Theoretical calculations performed for and various .

Image of FIG. 5.
FIG. 5.

Top panel: Room temperature CER spectra of the SQW with 16% In content (solid line) together with the fitting curve (thick line) and the moduli of individual CER resonances (dashes lines). Bottom panel: Theoretical calculations performed for and various .

Image of FIG. 6.
FIG. 6.

Top panel: Room temperature CER spectra of the SQW with 24% In content (solid line) together with the fitting curve (thick line) and the moduli of individual CER resonances (dashes lines). Bottom panel: Theoretical calculations performed for and various .

Image of FIG. 7.
FIG. 7.

Top panel: Room temperature CER spectra of the SQW with 32% In content (solid line) together with the fitting curve (thick line) and the moduli of individual CER resonances (dashes lines). Bottom panel: Theoretical calculations performed for and various .

Image of FIG. 8.
FIG. 8.

Method used to analyze the in SQWs with (a) 8% In, (b) 16% In, (c) 24%, In, and (d) 32% In. The horizontal dashed lines correspond to the energy difference between the 22H and 11H transitions taken from experimental data. The vertical thin dashed lines show the recommended range of the electron effective mass for these samples, whereas the dots mean the expected change in the electron effective mass.

Image of FIG. 9.
FIG. 9.

Method used to analyze the in SQWs with (a) 8% In, (b) 16% In, (c) 24% In, and (d) 32% In. The horizontal dashed lines correspond to the energy difference between the 22H and 11H transitions taken from experimental data. The solid and dashed curves correspond to the energy difference between the 22H and 11H transitions obtained from the theoretical calculations with the electron effective mass of and , respectively.

Image of FIG. 10.
FIG. 10.

Calculated variation of the and discontinuities for SQWs as a function of indium composition.

Tables

Generic image for table
Table I.

Room temperature binary material parameters used to calculate the strained quinary GaInNAsSb material parameters taken after Refs. 53 and 54.

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/content/aip/journal/jap/101/1/10.1063/1.2382721
2007-01-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2382721
10.1063/1.2382721
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