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Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition
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10.1063/1.2399882
/content/aip/journal/jap/101/1/10.1063/1.2399882
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2399882
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Thermodynamic prediction of the equilibrium solid and gas phase species present at a temperature of 2025 °C and a pressure of 400 Torr as a function of the flow rate. The flow rates of , , and Ar were constant at 29, 500, and 1500 sccm, respectively.

Image of FIG. 2.
FIG. 2.

Comparison of the normalized experimental growth rate and the normalized quantity of SiC expected to form at thermodynamic equilibrium as a function of the flow rate.

Image of FIG. 3.
FIG. 3.

Optical microscopy images showing the growth surface morphology on the carbon face of 4° off-axis 4H SiC substrates transitions rapidly from single crystal step flow growth to polycrystalline growth as the flow rate increases from 22 to 26 sccm corresponding to C/Si ratios of 0.78 and 0.93, respectively.

Image of FIG. 4.
FIG. 4.

Comparison of the normalized experimental growth rate and the normalized quantity of SiC expected to form at thermodynamic equilibrium as a function of the flow rate.

Image of FIG. 5.
FIG. 5.

Boundary between deposition of SiC and plotted as a function of C and Si precursor flow rates for at a temperature of 2025 °C, a pressure of 400 Torr, and a flow rate of 500 sccm.

Image of FIG. 6.
FIG. 6.

The position of the boundary shifts toward more C-rich growth conditions with an increase in the concentration in the growth environment. Temperature and pressure were constant at 2025 °C and 400 Torr, respectively. The increase in flow rate from 500 to 1000 sccm was offset by an equal decrease in Ar flow rate in order to maintain a constant total carrier gas flow rate of 2000 sccm.

Image of FIG. 7.
FIG. 7.

Optical microscopy images of the surfaces of SiC deposits showing that growth on the carbon face of a 4° off-axis 4H SiC substrate transitions from polycrystalline growth (a) to single crystal step flow growth (b) as the flow rate increases from 500 to 1000 sccm.

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/content/aip/journal/jap/101/1/10.1063/1.2399882
2007-01-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2399882
10.1063/1.2399882
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