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Modeling of organic thin film transistors: Effect of contact resistances
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10.1063/1.2402349
/content/aip/journal/jap/101/1/10.1063/1.2402349
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2402349

Figures

Image of FIG. 1.
FIG. 1.

Electrical model for a TFT affected by contact resistances, and , in series with the source and drain terminals, respectively.

Image of FIG. 2.
FIG. 2.

Simulation of the transfer characteristic curves and of its first derivative in the linear regime in the case of constant mobility (left column) and -dependent mobility (right column). The curves in solid lines are affected by constant contact resistances; the dashed lines are for Ohmic contacts. Parameters: , , , , , , and .

Image of FIG. 3.
FIG. 3.

Simulation of the transfer characteristic curves and of its first derivative in the saturation regime in the case of constant mobility (left column) and -dependent mobility (right column). The curves in solid lines are affected by constant contact resistances; the dashed lines are for Ohmic contacts. Parameters: , , , , , , and .

Image of FIG. 4.
FIG. 4.

Experimental transfer characteristic curve vs in the linear regime of a poly-3-hexylthiophene TFT with measured at (, top). The first derivative with respect to has been obtained by numerical differentiation (bottom).

Image of FIG. 5.
FIG. 5.

Quantities (top) and (bottom) calculated with the differential method presented in Sec. IV A starting from and of Fig. 4. The dashed line (bottom) represents a linear interpolation of in the range : intersection with the axis gives , from the line slope is calculated.

Image of FIG. 6.
FIG. 6.

Top: contact resistance extracted with the differential method of Sec. IV A starting from and of Fig. 4. The dashed line is a linear fitting to in the range . Bottom: comparison between the mobility extracted with the differential method of Sec. IV A (solid line) and the mobility obtained by means of fitting with Eq. (10) in two ranges: (fit 1) and (fit 2).

Image of FIG. 7.
FIG. 7.

Transfer characteristic curve in the saturation regime of a poly-3-hexylthiophene TFT with measured at (, top). The first and second derivatives with respect to have been obtained by numerical differentiation ( and , bottom).

Image of FIG. 8.
FIG. 8.

Quantity calculated with the differential method presented in Sec. IV C starting from , , and of Fig. 7. The ordinate intersection of the linear fit in the range gives , and its slope gives .

Image of FIG. 9.
FIG. 9.

Top: percent difference between the experimental transfer characteristic curve of Fig. 7 and the curves reconstructed by means of the differential method (solid line) and by means of the fitting (dashed line). Bottom: mobility extracted by means of the differential method (solid line) and by means of the fitting (dashed line).

Image of FIG. 10.
FIG. 10.

Top: extraction of and for the example of Sec. ??? exploiting the dependence of on . Bottom: is the mobility at extracted applying only the method of Sec. IV A and consequently still affected by -dependent contact resistances; is obtained combining the differential method of Sec. IV A with the scaling law method of Sec. ??? and reflects the real material property.

Image of FIG. 11.
FIG. 11.

For the example of Sec. ???, percent voltage drop on the transistor channel , on the constant contact resistance , and on the -dependent part of the contact resistances . Percent voltage drops are shown as a function of for , 10, and .

Image of FIG. 12.
FIG. 12.

Pure scaling law approach applied to the same experimental data used for Figs. 10 and 11. The position of the center of the bundle is different from the one which is expected applying our method (solid circle) and provides a constant contact resistance instead of .

Image of FIG. 13.
FIG. 13.

Apparent mobility extracted according to Eq. (34) in the saturation regime from the set of TFTs of Sec. ??? (hollow stars , hollow circles , and hollow squares ). Dashed lines are only a guide to the eye. Also plotted is the mobility (, solid triangles) extracted according to the scaling law method of Sec. ???.

Image of FIG. 14.
FIG. 14.

Example of extraction of mobility with the scaling law method of Sec. ??? for a TFT held at during vacuum deposition of the active material (see Sec. ???). For each channel length (nominal values: , 6, and , values obtained by means of optical microscopy , 5, and ), maximum (down triangles), minimum (down triangles), and mean measured apparent mobilities (squares) are reported. The dashed line is a linear interpolation of the mean apparent mobilities: from its axis intersection has been obtained; from its slope has been extracted.

Image of FIG. 15.
FIG. 15.

Gate-voltage-dependent contact resistances extracted from the set of TFTs of Sec. ??? according to the scaling law method of Sec. ???. Data refers to the TFTs with .

Image of FIG. 16.
FIG. 16.

Parameter of the contact resistances extracted from the set of TFTs of Sec. ??? according to the scaling law method of Sec. ???.

Tables

Generic image for table
Table I.

Comparison of TFT parameters for the example of Sec. IV B extracted in the linear regime by means of the differential method (valid for ), by means of fitting with Eq. (10) for , and by means of fitting with Eq. (10) for .

Generic image for table
Table II.

Comparison of TFT parameters for the example of Sec. IV D extracted in the saturation regime by means of the differential method of Sec. IV C (valid for ) and by means of fitting with Eq. (11) for .

Generic image for table
Table III.

Parameters of TFTs of Sec. ???. To extract , , and the constant part of the contact resistances , the method of Sec. IV A has been applied (the range of validity is also reported in the table). Subsequently the method of Sec. ??? has been applied to extract the -dependent part of the contact resistance in terms of and .

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/content/aip/journal/jap/101/1/10.1063/1.2402349
2007-01-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling of organic thin film transistors: Effect of contact resistances
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2402349
10.1063/1.2402349
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