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Operation and properties of ambipolar organic heterostructure field-effect transistors
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10.1063/1.2402353
/content/aip/journal/jap/101/1/10.1063/1.2402353
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2402353
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental output characteristics of a heterostructure transistor, using as source contact either (a) or (b) . The data are taken from Figs. 5(a) and 6(a) in Ref. 12 only curves for are plotted here. Notice the different scales for the current.

Image of FIG. 2.
FIG. 2.

(a) Device structure of the field-effect transistor based on an organic heterostructure, equivalent to the device structure used in Ref. 12. (b) Monolayer model structure studied in Ref. 20.

Image of FIG. 3.
FIG. 3.

Band scheme for the structure of Fig. 2(a) along the channel and perpendicular toward the top contact. Affinities, gaps and work functions are given in eV. Correspondingly, the hole (electron) injection barrier (bold lines) at the contact is 0:07 eV (0.26 eV), and the electron barrier from P13 to pentacene (hole barrier from pentacene to P13) is 0.18 eV (0.33 eV). In the simulation P13 has been replaced also by pentacene and the work function has been varied.

Image of FIG. 4.
FIG. 4.

Simulated output characteristics for (a) and (b) as source contact for a device structure according to Fig. 2(a) but with one single active layer of 80 nm thickness (pentacene) instead of two active layers with the same overall thickness, compared to the monolayer model structure according to Fig. 2(b) [taken from Figs. 4(a) and 5(a) in Ref. 20]. The gate-source voltages are negative in (a) and positive in (b). Parameters: work function 5.0 eV (barrier for holes 0.07 eV), work function 3.635 eV (barrier for electrons 0.415 eV), , , direct Langevin recombination, undoped organic layer. The drain current is given per unit channel width.

Image of FIG. 5.
FIG. 5.

Simulated output characteristics for (a) and (b) as source contact for the heterostructure according to Fig. 2(a) compared to curves from Fig. 4 for the 80 nm single layer. The gate-source voltages are negative in (a) and positive in (b). The parameter are chosen as in Fig. 3 with the same mobilities in both materials. for the given work function of 3.635 eV the injection barrier for electrons is 0.415 eV in contact with pentacene and 0.235 eV in contact with P13.

Image of FIG. 6.
FIG. 6.

Profiles of the (a) electron concentration and (b) hole concentration from source to drain for the current-voltage characteristics of Fig. 4(a). Lines indicate profiles 1 nm above the oxide/pentacene interface and lines with symbol profiles 1 nm above the pentacene/P13 interface for a variation of .

Image of FIG. 7.
FIG. 7.

Profiles of the (a) electron concentration and (b) hole concentration from drain to source for the current-voltage characteristics of Fig. 4(b). Lines indicate profiles 1 nm above the oxide/pentacene interface and lines with symbol profiles 1 nm above the pentacene/P13 interface for a variation of .

Image of FIG. 8.
FIG. 8.

Simulated output characteristics for (a) source and (b) source, variation of the gate-source voltage as indicated. Pentacene: , ; P13: , , , , and , . Here, the channel width is .

Image of FIG. 9.
FIG. 9.

Electron- and hole current densities 1 nm above the oxide/pentacene interface (, without symbol) and 1 nm above the pentacene/P13 interface (, with symbol) for the current-voltage characteristics of Fig. 8: and for (a) source and (b) source.

Image of FIG. 10.
FIG. 10.

Simulated output characteristics for (a) source [compare with Fig. 1(a)] and (b) source [compare with Fig. 1(b)], variation of the gate-source voltage as indicated. Pentacene: , ; P13: , , , , and . The channel width is . For , the characteristics for are shown also (open symbols).

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/content/aip/journal/jap/101/1/10.1063/1.2402353
2007-01-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Operation and properties of ambipolar organic heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2402353
10.1063/1.2402353
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