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Electron spin resonance study of as-deposited and annealed high- dielectrics on Si
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10.1063/1.2402974
/content/aip/journal/jap/101/1/10.1063/1.2402974
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2402974
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Selected ESR spectra obtained at room temperature for on (100)Si, annealed in at , for rotated in the (011) plane. The and spectra split for values of other than 0°. The individual components in the split spectra obtained by iterative fitting are shown as red lines and blue lines for and , respectively. (b) Map of anisotropic values of the components of the spectra for this sample of . The curves shown in red are a fit to the axially symmetric formula with and . The curves through the data (shown in blue) are guides to the eyes suggested by optimized fits to monoclinic symmetry reported in Ref. 18. The expected uppermost branch of the (indicated by a dashed blue line) has no data points. The data cannot be obtained with any confidence because of interference from close proximity to stronger signals.

Image of FIG. 2.
FIG. 2.

(Color online) ESR spectra obtained at room temperature on thick films of [(a)–(c)] and [(d)–(f)] on Si: [(a) and (d)] as deposited at [(b) and (e)] annealed at and [(c)–(f)] annealed at . Magnetic field is parallel to the (100) face normal. Fitted subspectra (smooth solid lines) of the individual defect resonances are shown for (b) and (e) only. The inset shows the spectra for grown at as well as the bare hydrophobic Si wafer background subtracted from all displayed spectra.

Image of FIG. 3.
FIG. 3.

(Color online) ESR spectra obtained at room temperature on thick samples of [(a)–(c)] and [(d) and (f)] on Si: [(a) and (d)] as deposited at [(b) and (e)] annealed at and [(c) and (f)] annealed at . Magnetic field is parallel to the (100) face normal. Fitted subspectra of the individual defect resonances are shown for (b) and (e) only.

Image of FIG. 4.
FIG. 4.

Densities of and defects for (a) films (b) and films of and as well as for calculated from fits to the spectra shown in Figs. 2 and 3 as a function of temperature.

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/content/aip/journal/jap/101/1/10.1063/1.2402974
2007-01-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2402974
10.1063/1.2402974
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