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Numerical designing of semiconductor structure for optothermionic refrigeration
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10.1063/1.2404778
/content/aip/journal/jap/101/1/10.1063/1.2404778
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2404778
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic band diagram of refrigeration system. The width of highly doped region , the spacer width , and the well width .

Image of FIG. 2.
FIG. 2.

Refrigeration heat with various material parameter as a function of voltage with doping density as and well width as 100 nm. Arrow 1 corresponds to 1.30 V, arrow 2 corresponds to 1.34 V, and arrow 3 corresponds to 1.41 V, respectively.

Image of FIG. 3.
FIG. 3.

Total refrigeration heat , radiative heat , and Auger dissipation heat as a function of bias voltage. The material parameters are as 0.65, as , and as 100 nm. The arrows in this figure are corresponding to those in Fig. 2.

Image of FIG. 4.
FIG. 4.

Spatial distribution of electron (solid curves) and hole (dotted curves) density with three applied bias voltage of 1.30, 1.34, and 1.41 V, respectively. The material parameters are as 0.65, as , and as 100 nm.

Image of FIG. 5.
FIG. 5.

Refrigeration heat with various doping density as a function of bias voltage. The parameters are as 0.65 and the well width as 100 nm.

Image of FIG. 6.
FIG. 6.

Schematic band diagram of the double-well system. The well width is 100 nm and the spacer width is 50 nm.

Image of FIG. 7.
FIG. 7.

Comparison of refrigeration heat between single-well system and double-well system. The parameters are as 0.65, as 100 nm, and as .

Image of FIG. 8.
FIG. 8.

Refrigeration heat with various doping density as a function of bias voltage for double-well system. The parameters are as 0.65 and as 100 nm.

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/content/aip/journal/jap/101/1/10.1063/1.2404778
2007-01-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Numerical designing of semiconductor structure for optothermionic refrigeration
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2404778
10.1063/1.2404778
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