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Contactless electroreflectance of quantum dashes grown on InP substrate: Analysis of the wetting layer transition
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10.1063/1.2405233
/content/aip/journal/jap/101/1/10.1063/1.2405233
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2405233
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Figures

Image of FIG. 1.
FIG. 1.

Typical bright field (top) and -contrast (bottom) STEM micrographs of QDash structures grown using a nominal amount of InAs of .

Image of FIG. 2.
FIG. 2.

Room temperature CER spectra (solid lines) and PL spectra (dashes lines) measured for QDash structures with (a) , (b) etched , and (c) InP cap layers.

Image of FIG. 3.
FIG. 3.

Sketch of the band bending in QDash structures (a) with a cap layer and (b) without any cap layer, i.e., the cap is etched. QDashes are neglected in this sketch for simplicity. The optical transitions labeled as (i), (ii), and (iii) correspond to the light absorption in the cap layer, QDash barriers, and the WL QW, respectively.

Image of FIG. 4.
FIG. 4.

Method used to achieve a match of theoretical WL transition energy (solid curves) with those found from the fitting of the CER spectra (horizontal dashed line) for the WL QW.

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/content/aip/journal/jap/101/1/10.1063/1.2405233
2007-01-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Contactless electroreflectance of InAs∕In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2405233
10.1063/1.2405233
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