Typical bright field (top) and -contrast (bottom) STEM micrographs of QDash structures grown using a nominal amount of InAs of .
Room temperature CER spectra (solid lines) and PL spectra (dashes lines) measured for QDash structures with (a) , (b) etched , and (c) InP cap layers.
Sketch of the band bending in QDash structures (a) with a cap layer and (b) without any cap layer, i.e., the cap is etched. QDashes are neglected in this sketch for simplicity. The optical transitions labeled as (i), (ii), and (iii) correspond to the light absorption in the cap layer, QDash barriers, and the WL QW, respectively.
Method used to achieve a match of theoretical WL transition energy (solid curves) with those found from the fitting of the CER spectra (horizontal dashed line) for the WL QW.
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