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composite substrates for growth of and alloys
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10.1063/1.2407274
/content/aip/journal/jap/101/1/10.1063/1.2407274
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2407274
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) RBS random and channeled spectra of on . Note that all constituent elements in the film channel remarkably well. (Inset) (224) XRD maps of the layers relative to the Si peak showing that the corresponding in plane parameters are virtually identical, . Note that the Ge–Sn and InGaAs (224) peaks fall directly on the line connecting the Si peak to the origin of the spectrum indicating a relaxed film.

Image of FIG. 2.
FIG. 2.

Bright field XTEM micrograph of heterostructure. (Inset) High-resolution micrograph of the interface between the layers showing the epitaxial alignment of the (111) lattice planes.

Image of FIG. 3.
FIG. 3.

Photoluminescence spectrum of a sample at excited with a laser line.

Image of FIG. 4.
FIG. 4.

Room temperature Raman spectrum of an sample obtained in the backscattering configuration at the (001) surface. The excitation wavelength was .

Image of FIG. 5.
FIG. 5.

(Color online) (224) XRD reciprocal space map of a structure showing that the lattice parameters of the film and the buffer are identical. Note that the and (224) peaks fall directly on the line connecting the Si peak to the origin consistent with a relaxed film.

Image of FIG. 6.
FIG. 6.

(Color online) (top) Bright field XTEM micrograph of a lattice matched layer. (bottom) High resolution image showing an epitaxial interface.

Image of FIG. 7.
FIG. 7.

(Color online) Figure shows a plot of the lattice constant dependence of the direct band gap in III-V compounds (dashed) and IV-IV (solid line) semiconductors including Sn containing systems. Gray area indicates the compositions of ternary alloys that lattice match to the with up to 0.08. Circles show the and relaxed compositions that were grown epitaxially on buffer layers.

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/content/aip/journal/jap/101/1/10.1063/1.2407274
2007-01-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge1−ySny∕Si(100) composite substrates for growth of InxGa1−xAs and GaAs1−xSbx alloys
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2407274
10.1063/1.2407274
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