Current-voltage characteristics of ITO contacts on and strained before and after annealing at for .
AES spectral peaks for (a) Ga ( transition), (b) N ( transition), and (c) Sn ( transition) as a function of the sputtering depth from the ITO surface.
Schematic energy band diagrams of (a) and (b) .
Variation of specific contact resistance as a function of annealing time (at ).
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