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Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained layer
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10.1063/1.2424320
/content/aip/journal/jap/101/1/10.1063/1.2424320
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2424320
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of ITO contacts on and strained before and after annealing at for .

Image of FIG. 2.
FIG. 2.

AES spectral peaks for (a) Ga ( transition), (b) N ( transition), and (c) Sn ( transition) as a function of the sputtering depth from the ITO surface.

Image of FIG. 3.
FIG. 3.

Schematic energy band diagrams of (a) and (b) .

Image of FIG. 4.
FIG. 4.

Variation of specific contact resistance as a function of annealing time (at ).

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/content/aip/journal/jap/101/1/10.1063/1.2424320
2007-01-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/1/10.1063/1.2424320
10.1063/1.2424320
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