(a) Contact area dependence of current through a Au/pentacene/ITO heterostructure. The inset is the geometry of the device. (b) Film thickness dependence of current through a Au/pentacene/ITO device.
(a) characteristics of a symmetric Au/pentacene/Au structure. The inset is the geometry of the device. (b) Semilog plot of characteristics of symmetric Ag, Au, and Pt devices (pentacene in all devices). The inset is a schematic of possible physical differences between the top and bottom contacts.
(a) characteristics of a Au/pentacene/ITO device. The inset is a geometry of the device. (b) Semilog plot of characteristics of the nonsymmetric Ag, Au, and Pt devices (pentacene and contact in all devices).
Arrhenius plots of reverse current density (at reverse ) of Ag/, Au/, and Pt/pentacene/ITO devices in the thermally activated regime.
Logarithmic forward characteristics of a Au/pentacene/ITO device for different temperatures.
Comparison of numerical model results and (room temperature) experimental data for the symmetric Ag, Au, and Pt devices with a pentacene layer thickness of .
Schottky barrier heights vs metal work function for the metal/pentacene contacts investigated.
Schematic energy diagrams for the various interfaces between pentacene and Pt, Au, and Ag. The injection barrier heights derive from our activation energy data.
Interface dipoles vs work function for metal/pentacene interfaces.
Values of contact barrier heights determined from activation energy of reverse current, and values obtained by the difference between metal work function and HOMO level of pentacene . The interface dipoles formed at metal/pentacene contacts are calculated from these values.
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