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Raman microprobe characterization of electrodeposited S-rich for photovoltaic applications: Microstructural analysis
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10.1063/1.2734103
/content/aip/journal/jap/101/10/10.1063/1.2734103
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/10/10.1063/1.2734103
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM cross-section view of (left) as-grown electrodeposited precursor and (right) sulfurized and NaCN etched absorber.

Image of FIG. 2.
FIG. 2.

Surface Raman spectrum of an electrodeposited precursor layer.

Image of FIG. 3.
FIG. 3.

(left) OM image of a precursor, and (right) micro-Raman spectrum measured with the laser spot focused on a dark-surface inhomogeneity.

Image of FIG. 4.
FIG. 4.

Grazing incidence XRD diffractograms measured at different values of from a electrodeposited film. Dashed lines indicate the position of reflections from: (a) CuSe (101), (222); (b) (112); (c) CuSe (102); (d) Se (102); (e) Mo (110); (f) (220)/(204), (404); (g) CuSe (110), and (h) (312).

Image of FIG. 5.
FIG. 5.

Micro-Raman spectra obtained with the laser spot focused in two different regions of the surface of a sulfurized precursor. The figure also shows the OM image of the surface of the sample.

Image of FIG. 6.
FIG. 6.

Detail of a cross-section SEM image from a sulfurized (not etched) sample, showing a Cu(S,Se) surface aggregate (marked with arrows).

Image of FIG. 7.
FIG. 7.

OM image of the surface of a sulfurized absorber, after etching in NaCN.

Image of FIG. 8.
FIG. 8.

(Left) Cross-section Raman spectra of a sulfurized and NaCN etched absorber obtained from different positions in the sample. The number of the spectrum increases toward the Mo interface. (Right) Detail of a cross-section spectrum showing the presence of bands indicating the existence of traces of Cu(S,Se) even after the NaCN etching.

Image of FIG. 9.
FIG. 9.

(a) AES depth profile, and (b) Raman spectra obtained at different depths from a sulfurized and NaCN etched absorber.

Image of FIG. 10.
FIG. 10.

XRD spectrum of a sulfurized and NaCN etched precursor. Peaks related to are indicated with asterisks. The asymmetric peak at about 33° can be interpreted as due to the contribution in the spectrum of (200) and (400) reflections (Refs. 18 and 19). The spectrum also shows peaks that can be indexed with (400) (at about 69°), (444) (at about 60.1°), and (800) (at about 70.7°).

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/content/aip/journal/jap/101/10/10.1063/1.2734103
2007-05-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis
http://aip.metastore.ingenta.com/content/aip/journal/jap/101/10/10.1063/1.2734103
10.1063/1.2734103
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