SEM cross-section view of (left) as-grown electrodeposited precursor and (right) sulfurized and NaCN etched absorber.
Surface Raman spectrum of an electrodeposited precursor layer.
(left) OM image of a precursor, and (right) micro-Raman spectrum measured with the laser spot focused on a dark-surface inhomogeneity.
Grazing incidence XRD diffractograms measured at different values of from a electrodeposited film. Dashed lines indicate the position of reflections from: (a) CuSe (101), (222); (b) (112); (c) CuSe (102); (d) Se (102); (e) Mo (110); (f) (220)/(204), (404); (g) CuSe (110), and (h) (312).
Micro-Raman spectra obtained with the laser spot focused in two different regions of the surface of a sulfurized precursor. The figure also shows the OM image of the surface of the sample.
Detail of a cross-section SEM image from a sulfurized (not etched) sample, showing a Cu(S,Se) surface aggregate (marked with arrows).
OM image of the surface of a sulfurized absorber, after etching in NaCN.
(Left) Cross-section Raman spectra of a sulfurized and NaCN etched absorber obtained from different positions in the sample. The number of the spectrum increases toward the Mo interface. (Right) Detail of a cross-section spectrum showing the presence of bands indicating the existence of traces of Cu(S,Se) even after the NaCN etching.
(a) AES depth profile, and (b) Raman spectra obtained at different depths from a sulfurized and NaCN etched absorber.
XRD spectrum of a sulfurized and NaCN etched precursor. Peaks related to are indicated with asterisks. The asymmetric peak at about 33° can be interpreted as due to the contribution in the spectrum of (200) and (400) reflections (Refs. 18 and 19). The spectrum also shows peaks that can be indexed with (400) (at about 69°), (444) (at about 60.1°), and (800) (at about 70.7°).
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